Preparation method for erbium-containing and neodymium-containing phosphorus germinate glass chip

A technology of phosphogermanate and glass chips, which is applied in glass manufacturing equipment, glass molding, manufacturing tools, etc., can solve the problem of poor chemical stability and mechanical properties, high melting temperature of germanate glass, and difficulty in practical industrialization And other problems, to achieve good transparency, thermal stability and physical and chemical properties, reduce the effect of phonon energy

Inactive Publication Date: 2012-07-11
SHENZHEN JOSEN INDAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the complex preparation process, poor chemical stability and mechanical properties of the above-mentioned substances, it is difficult to industrialize them (see J . Y Allain , M . Monerie , and H . Poignant , Room temperature cw tunable green upconversion holmium fiber laser, Electron. Lett. 1990, 26 (4): 261-262)
Fused silica glass has good physical properties, but its phonon energy is high (1100cm~1), and its rare earth solubility is poor
The application of germanate glass is also limited due to high melting temperature and expensive raw material cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Get 70 grams of powdery raw materials phosphorus pentoxide, 7.5 grams of germanium dioxide, 20 grams of zinc oxide, 0.5 grams of erbium oxide, and 2 grams of neodymium oxide, and mix the above raw materials evenly. Put the mixture into a quartz tong pot or a platinum tong pot, and cover the platinum tong pot to prevent Cl -1 of volatilization. The quartz pliers or platinum pliers filled with the mixed materials were melted in a silicon carbide rod electric furnace at a melting temperature of 1400°C, and dry nitrogen was introduced for atmosphere protection during the melting process. After the raw materials are completely melted and homogenized and clarified, they are released from the furnace at 1100°C. After the furnace is released, the molten glass is quickly poured on the preheated iron mold to form it. The formed glass is then placed in a muffle furnace that has been heated to around the material transition temperature (Tg) of 436°C for annealing. During the anne...

Embodiment 2

[0026] Get 60 grams of powdery raw materials phosphorus pentoxide, 7.5 grams of germanium dioxide, 10 grams of zinc oxide, 20 grams of zinc chloride, 0.5 grams of erbium oxide, and 2 grams of neodymium oxide, and mix the above raw materials evenly. Put the mixture into a quartz tong pot or a platinum tong pot, and cover the platinum tong pot to prevent Cl -1 of volatilization. The quartz tongs or platinum tongs filled with the mixed materials were melted in a silicon carbide rod electric furnace at a melting temperature of 1300°C, and dry nitrogen was introduced for atmosphere protection during the melting process. After the raw materials are completely melted and homogenized and clarified, they are released from the furnace at 1000°C. After the furnace is released, the molten glass is quickly poured on the preheated iron mold. Then put the formed glass into a muffle furnace that has been heated to a material transition temperature (Tg) of 419°C for annealing. Then the tempe...

Embodiment 3

[0029] Get 50 grams of powdery raw materials phosphorus pentoxide, 4 grams of germanium dioxide, 10 grams of zinc oxide, 30 grams of zinc chloride, 1 gram of erbium oxide, and 5 grams of neodymium oxide, and mix the above raw materials evenly. Put the mixture into a quartz tong pot or a platinum tong pot, and cover the platinum tong pot to prevent Cl -1 of volatilization. The quartz tongs or platinum tongs containing the mixed materials were melted in a silicon carbide rod electric furnace at a melting temperature of 1350°C, and dry nitrogen was introduced for atmosphere protection during the melting process. After the raw materials are completely melted and homogenized and clarified, they are released from the furnace at 1150°C, and the molten glass is quickly poured on the preheated iron mold after the furnace is released. Then put the formed glass into a muffle furnace that has been heated to a material transition temperature (Tg) of 408°C for annealing. Then the temperat...

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Abstract

The invention relates to a preparation method for an erbium-containing and neodymium-containing phosphorus germinate glass chip. The method comprises the following steps: a, mixing 40 to 70 molar percent of phosphorus pentoxide, 0 to 7.5 molar percent of germanium dioxide, 4 to 20 molar percent of zinc oxide, 0 to 50 molar percent of zinc chloride, 0.5 to 1 molar percent of erbium oxide and 2 to 5 molar percent of neodymium oxide uniformly; b, placing a mixture into a covered quartz crucible or platinum crucible, placing into an electric furnace and melting at the temperature of 1,300 and 1,450 DEG C to form molten glass; c, homogenizing and clarifying the molten glass which is molten completely, discharging out of the furnace and quickly pouring in a preheated die; d, putting the formed glass into a muffle furnace which is heated to the glass transition temperature and annealing; and e, taking out the glass sample after the glass sample is cooled completely. The prepared phosphorus germinate glass has the characteristics of high transparency, strong crystallization resistance, excellent heat stability and physicochemical properties, stable near infrared laser property and the like.

Description

technical field [0001] The invention relates to a glass preparation method, in particular to a preparation method of a phosphorous germanate glass chip containing erbium and neodymium elements for near-infrared laser output. Background technique [0002] Near-infrared laser has broad application prospects in laser medical treatment, human eye safety lidar, remote sensing detection, atmospheric monitoring, etc., especially in the application of human physiotherapy, such as treating hyperlipidemia, reducing blood viscosity to prevent cardiovascular and cerebrovascular diseases, The treatment of cardiovascular and cerebrovascular diseases and the prevention of high blood pressure have received widespread attention. What is commonly used at present is to directly act on the human body with the 650-780 nm visible red laser emitted by the semiconductor laser. However, the laser in this band has relatively high energy due to its short wavelength. The infrared laser with a wavelen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C3/253C03B19/02
Inventor 卢子忱
Owner SHENZHEN JOSEN INDAL
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