The application discloses a preparation method of a near-
infrared vertical cavity surface
laser with low threshold and high
gain based on weakly confined
quantum dots, and belongs to the technical field of
quantum dot lasers. A CdS shell layer is grown on the weakly confined double-tapered CdSe
quantum dots, and the thickness of the CdS shell layer is controlled to be 2
layers by controlling the injection amount of dodecanethiol; the CdSe / CdS quantum dots are spin-coated on the high-reflection surface of two Bragg reflectors (DBRs); and the surfaces coated with the quantum dots are close to each other and are spliced to form a vertical cavity surface
laser. The vertical cavity surface
laser constructed by taking the weakly confined double-tapered hexahedral CdSe / CdS quantum dots as deep red
gain material has deep red / near-
infrared laser emission of 720 nm, an extremely low
laser threshold of 11.23 µJ / cm 2 and an extremely wide
gain bandwidth of 670-730 nm.