Y, Sc, Gd and La silicate mischcrystal doped with Yb, lanthanum silicate crystal and melt method growth method thereof

Abstract

The invention discloses a Y, Sc, Gd and La silicate mischcrystal doped with Yb ion, lanthanum silicate crystal and a melt method growth method thereof, the molecular formula thereof is Yb2xRE[2(1-x-y)]RE'2ySiO5 (0<X<1, 0<Y<1, 0<X+Y<2, RE, RE'=Gd, Y, Sc, La, and RE[2(1-X-Y)]RE'2y is not equal to Gd[2(1-x-y)]Y'2y, Yb2xLa[2(1-x)]SiO5 (0<X<1). The method comprises the following steps: fully mixing thewell-prepared raw materials, pressing and shaping, sintering at a high temperature to obtain the starting raw material for crystal growth, placing the growth starting raw material into a pot, heatingand fully melting to obtain initial melt for melt method growth, and carrying out directional or nondirectional growth by a melt method such as a pulling method, a Bridgman-Stockbarge method, a temperature gradient method and other melt methods. Yb2xRE[2(1-x-y)]RE'2ySiO5, Yb2xLa[2(1-x-y)]SiO5 monocrystal can be used as working substances in all-solid state ultrashort pulse lasers and tunable lasers.

Description

technical field [0001] The invention relates to the fields of laser materials and crystal growth, in particular to Yb-doped yttrium, scandium, gadolinium, lanthanum silicate mixed crystals and lanthanum silicate crystals and their melt growth method. Background technique [0002] In recent years, with the improvement of the performance of 900-1100nm GaAs laser diodes (LD), people are more and more interested in diode-pumped Yb ion-doped laser crystals. This is because Yb ions are ideal active ions for diode-pumped laser materials, which have a simple energy level structure and only 2 f 7 / 2 and 2 f 5 / 2 Two multiple states avoid laser energy loss such as up-conversion, cross-relaxation, and excited states. In addition, Yb ions have a wide emission band, which is beneficial to the generation of ultrashort pulses, and the small quantum defects between the absorption and excitation wavelengths lead to low thermal loading, reducing a series of undesirable consequences, such as...

AI Technical Summary

Problems solved by technology

However, the emission width of Yb:YAG is relatively narrow, and the laser produces a transition from the lowest energy level of the upper energy level to the second highest energy level of the lower energy level, and the threshold is relatively high. The reason is that the crystal field of Yb ions in YAG is weak, resulting in 2 f 7 / 2 The energy level split is smaller, and the lower energy level position of laser emission is lower