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Semiconductor side pumped solid-state laser

A solid-state laser, side-pumped technology, applied in lasers, laser parts, phonon exciters, etc., can solve problems such as unfavorable laser processing, large diffraction loss and geometric loss, and irreversible changes in the optical path.

Active Publication Date: 2014-07-23
WUHAN SINTEC OPTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cavity mirrors at both ends of the flat cavity adopt plane mirrors. Although the cavity type is easy to adjust, the raw materials are convenient to process, and the divergence angle is small, there are many defects.
First of all, due to the mismatch between the curvature of the cavity mirror and the radius of curvature of the Gaussian beam generated in the cavity, the diffraction loss and geometric loss are large, which increases the loss in the cavity, directly leads to the decrease of laser output power and the increase of threshold, and indirectly reduces conversion efficiency
Secondly, the mode selection ability of the flat cavity is poor, and it is easy to generate multi-mode oscillation, which reduces the beam quality and is very unfavorable to laser processing
At the same time, improper selection of the diameter and position of the aperture diaphragm will also affect the output of the fundamental mode
Finally, as a critically stable cavity, the adjustment accuracy of the flat cavity is high, and the laser output will be seriously affected by vibration and other external forces, and the optical path will undergo irreversible changes

Method used

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  • Semiconductor side pumped solid-state laser
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0026] figure 1 It is a schematic diagram of the physical structure of a 1064nm semiconductor side-pumped solid-state laser, and its corresponding optical path structure diagram is as follows figure 2 As shown, the semiconductor side-pumped solid-state laser includes a laser module, a resonant cavity, and a cooling system. The laser module 5 uses a 50W laser module from Haite Optoelectronics. The resonant cavity includes a total reflection mirror 2, an output mirror 6, and an aperture diaphragm. 3. The total reflection mirror 2 and the output mirror 6 are plano-concave mirrors with a certain radius of curvature, and an aperture stop 3 is placed near the total reflection mirror in the cavity. The beam expander 7 is arranged on the output optical path of the output mirror 6 . In addition, 1 in the figure is a red light indicator, and 7 is a beam expander (optional). The function of the red light indicator 1 is: to align the optical path during dimming; to indicate the position...

Embodiment approach 2

[0034] Using the structure of Embodiment 1, the total reflection mirror 2 is replaced by the radius of curvature R 1 =4m plano-concave mirror, coated with 1064nm HR film on the concave surface, HR film reflectivity R>99.8%; output mirror 6 is replaced by curvature radius R 2 =0.6m plano-concave mirror, coated with 1064nm transmittance T=25% film on the concave surface, coated with 1064nm AR film on the plane, AR film reflectivity R<0.2%. The distance between the output mirror 6 and the total reflection mirror 2 is changed to 0.3m, and the distance between the aperture diaphragm 3 and the total reflection mirror 2 is adjusted to 0.06m.

[0035] Using this structure, the maximum continuous output power of 33W can be obtained, the power instability is less than 2% within four hours, the beam quality is lower than that of Embodiment 1, the far-field divergence angle is enlarged, and the spot size is 2.8mm.

Embodiment approach 3

[0037] Using the structure of Embodiment 1, the total reflection mirror 2 is replaced by the radius of curvature R 1 =6m plano-concave mirror, coated with 1064nm HR film on the concave surface, HR film reflectivity R>99.8%; output mirror 6 is replaced by curvature radius R 2 =0.8m plano-concave mirror, coated with 1064nm transmittance T=25% film on the concave surface, coated with 1064nm AR film on the plane, AR film reflectivity R<0.2%. The distance between the output mirror 6 and the total reflection mirror 2 is changed to 0.5m, and the distance between the aperture diaphragm 3 and the total reflection mirror 2 is adjusted to 0.08m.

[0038] Using this structure, the maximum continuous output power of 30W can be obtained, the power instability is less than 3% within four hours, the beam quality is lower than that of Embodiment 1, the far-field divergence angle is reduced, and the spot size is 3.2mm.

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Abstract

The invention relates to a solid-state laser, and in particular relates to a semiconductor side pumped solid-state laser. The semiconductor side pumped solid-state laser comprises a laser module, a resonant cavity and a cooling system as well as a beam expander, wherein the resonant cavity is an approximate semi-concentric cavity formed by an all-reverse mirror, a micropore diaphragm and an output mirror, the all-reverse mirror is a plano-concave mirror with a radius of curvature being 4-6m, the output mirror is a plano-concave mirror with a radius of curvature being 0.6-0.8m, and the beam expander is arranged on an output light path of the output mirror. The semiconductor side pumped solid-state laser has the advantages of high stability, beam quality and peak power.

Description

technical field [0001] The invention relates to a solid-state laser, in particular to a semiconductor side-pumped solid-state laser. Background technique [0002] At present, in the application fields such as laser marking and surface treatment processing, semiconductor side-pumped solid-state lasers occupy most of the market. This type of laser utilizes the characteristic that the output wavelength of the semiconductor laser matches the absorption wavelength of the crystal to obtain an order of magnitude higher conversion efficiency than lamp pumping. Side pumping achieves high-power pumping and high-power laser output. Currently, this type of solid-state laser is commonly used between 50-100W. At the same time, Nd:YAG can obtain higher intracavity energy storage, narrow pulse width and high peak power due to its longer spontaneous emission lifetime, and is especially suitable for surface processing of metal materials and engraving at a certain depth. Its key component, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/086H01S3/139H01S3/16
Inventor 韩捷飞李扬陈义红陈义兵
Owner WUHAN SINTEC OPTRONICS
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