Formation method of test structure and detection method of work function
A technology of test structure and detection method, applied in semiconductor/solid-state device test/measurement, electrical components, circuits, etc., can solve the problems of increased cost, low detection flexibility, etc., to improve stability and accuracy, and improve detection flexibility. The effect of high flexibility and flexibility
Inactive Publication Date: 2018-12-04
SEMICON MFG INT (SHANGHAI) CORP +1
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[0004] The object of the present invention is to provide a method for forming a test structure to solve the problem that the test structure formed by photolithography and etching processes easily leads to an increase in cost and low detection flexibility
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[0028] In the manufacturing process of semiconductors, it is usually necessary to perform multiple process steps (for example, photolithography process, development process and etching process, etc.) Properties of the formed semiconductor structures.
[0029] For example, in the work function (WorkFunction, WF) detection of semiconductor structures, at present, in order to test the work function of semiconductor devices, MOS capacitors (MOS Capacitor, MOSCAP) are usually made first to use MOS capacitors to obtain capacitance-voltage (C-V ) curve, and then obtain the work function from the capacitance-voltage curve. The MOS capacitor generally includes: a substrate and an insulating layer and a conductive layer sequentially formed on the substrate. During the measurement of the work function, the conductive layer and the substrate are respectively used as two electrodes to apply a predetermined bias voltage to the two, thereby realizing the change of the electric field in the ...
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The invention provides a formation method of a test structure and a detection method of a work function. The formation method includes steps: providing a substrate, and forming an insulating layer anda conductive layer in sequence on the substrate; and cutting the conductive layer to form at least a to-be-tested block, wherein the cutting depth of the conductive layer is greater than or equal tothe thickness of the conductive layer. Namely, a cutting process is combined, on the basis of avoiding large-area coverage of the conductive layer of the formed to-be-tested block on the substrate, the formed to-be-tested block has a larger dimension compared with the test structure formed by employing processes of photoetching and etching so that the detection can be conducted by employing various different measuring tools, and the detection flexibility is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a test structure and a method for measuring a work function. Background technique [0002] In the manufacturing process of semiconductor devices, it is often necessary to analyze and judge the performance of the formed semiconductor structure to confirm whether the semiconductor structure meets the requirements, which is conducive to monitoring the quality of the semiconductor structure in the manufacturing process and ensuring the final semiconductor structure. The formed semiconductor device was satisfactory. When forming a semiconductor structure, a test structure is usually formed on the substrate at the same time, and by performing corresponding detection on the test structure, the performance of the semiconductor structure can be deduced according to the detection results. [0003] Although the performance of the semiconductor structure can be r...
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IPC IPC(8): H01L21/66
CPCH01L22/30H01L22/34
Inventor 王晓凤黄怡徐俊
Owner SEMICON MFG INT (SHANGHAI) CORP