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Method for preparing carbon nanotube

A carbon nanotube, electric field direction technology, applied in the direction of carbon nanotubes, single-walled carbon nanotubes, nanostructure manufacturing, etc., can solve problems such as unrealizable and inability to arbitrarily change the chirality of carbon nanotubes

Active Publication Date: 2018-12-07
TSINGHUA UNIV +1
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] However, it is still not possible to directly grow semiconducting carbon nanotubes with higher purity.
At the same time, in the prior art, the chirality of carbon nanotubes cannot be arbitrarily changed during the growth of carbon nanotubes, that is, carbon nanotubes cannot form carbon nanotubes with alternating semiconducting carbon nanotube segments and metallic carbon nanotube segments as required during the growth process. nanotube
At the same time, it is impossible to apply the above-mentioned carbon nanotubes with alternating semiconducting carbon nanotube segments and metallic carbon nanotube segments to carbon nanotube structures and applications of carbon nanotube structures, such as thin film transistors, photodetectors, Photoelectric conversion module, etc.

Method used

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  • Method for preparing carbon nanotube

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Embodiment Construction

[0030] The preparation of the carbon nanotube hand provided by the present invention and the carbon nanotube structure obtained by the method, the thin film transistor prepared by using the carbon nanotube structure, the photodetector, and the photoelectric conversion device will be further detailed in conjunction with specific examples below. illustrate.

[0031] see figure 1 , the first embodiment of the present invention provides a method for preparing carbon nanotubes, which includes the following steps:

[0032] Step S11, providing a substrate 11, depositing a catalyst layer 12 on the surface of the substrate 11;

[0033] Step S12, setting the substrate 11 in a reaction furnace 13, heating to make the temperature in the reaction furnace reach a predetermined temperature, passing a carbon source gas 14 and a protective gas 15 into the reaction furnace 13, so that the substrate 11 Growing a carbon nanotube segment structure 16, the carbon nanotube segment structure 16 inc...

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Abstract

The invention relates to a method for preparing a carbon nanotube. The method comprises the steps of: providing a substrate, and depositing a catalyst layer on the surface of the substrate; placing the substrate in a reaction furnace, performing heating to bring the temperature in the reaction furnace to a predetermined temperature, introducing a carbon source gas and a protective gas into the reaction furnace, so as to grow a first carbon nanotube segment structure on the substrate, wherein the first carbon nanotube segment structure comprises a plurality of metallic carbon nanotube segments;applying an electric field to the grown first carbon nanotube segment structure, wherein the electric field direction is a direction for positively charging the catalyst layer; and reversing the electric field direction so as to grow a semiconducting carbon nanotube segment from the metallic carbon nanotube segment.

Description

technical field [0001] The invention relates to the technical field of carbon nanotube chirality, in particular to a preparation method of carbon nanotube. Background technique [0002] Carbon nanotubes have attracted extensive attention due to their excellent properties such as high Young's modulus, tensile strength, and high thermal conductivity. [0003] In the single-walled carbon nanotubes prepared by the traditional chemical vapor deposition method, the ratio of metallic carbon nanotubes and semiconducting carbon nanotubes is about 1:2. In order to obtain semiconducting carbon nanotubes with higher purity, in the past two decades, after continuous research on the thermodynamics and kinetics of carbon nanotubes, people have been able to grow semiconducting carbon with a purity of 97% by CVD. nanotube. [0004] However, it is still not possible to directly grow semiconducting carbon nanotubes with higher purity. At the same time, in the prior art, the chirality of car...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/162C01B32/168B82Y40/00B82B3/00H10N10/855
CPCB82B3/0038B82Y40/00C01P2002/80C01P2004/03C01B2202/20C01B2202/02C01B32/16B82Y30/00H10K85/221H10K10/484C01B32/162C01B32/159
Inventor 王江涛柳鹏姜开利范守善
Owner TSINGHUA UNIV
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