A method for reducing the photomask fog surface defects through humidity modification

A mask and matte technology, applied in the field of microelectronics, can solve the problems of repeated defects, high incidence of fog-like defects, easy breeding of haze, etc., and achieve the effect of ensuring equipment accuracy and improving growth conditions.

Active Publication Date: 2018-12-07
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

[0002] During the daily use of the mask in the fab, due to the influence of the environment, storage methods and other factors, haze defects (Haze) will occur, and it is still an unavoidable and unsolvable issue worldwide
[0003] Through data and theoretical analysis, it is found that the humidity of the reticle stage (Reticle stage) of the ArF excimer laser equipment is 25% much higher than that of the immersion equipment (IMM) (5%), which leads to the harsh internal environment of the machine and is easy to breed Haze
The haze rate of ArF excimer laser equipment is very high, which can easily cause repeat defects and seriously affect the product yield

Method used

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  • A method for reducing the photomask fog surface defects through humidity modification

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Embodiment Construction

[0024] It should be noted that, in the case of no conflict, the following technical solutions and technical features can be combined with each other.

[0025] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0026] Such as figure 1 As shown, a method for reducing the fog surface defect of photomask 1 through humidity transformation is applicable to ArF excimer laser equipment for performing the exposure process of photomask 1, and the above-mentioned ArF excimer laser equipment includes a mask for performing the above-mentioned exposure process stage and a gas pipeline 3 for delivering compressed dry air (Compressed dry air, CDA) to the above-mentioned mask stage 2 during the above-mentioned exposure process, the above-mentioned method includes:

[0027] Above-mentioned ArF excimer laser equipment is positioned at above-mentioned mask stage 2 ( figure 1 The area enclosed by the middle circle is the m...

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Abstract

The invention provides a method for reducing photomask fog surface defects through humidity modification, The invention belongs to the technical field of microelectronics, and comprises the followingsteps: when the ArF excimer laser device performs the exposure process on the photomask located on the mask table, a step of controlling the gas flow rate of the compressed dry air delivered to the mask table in the gas pipeline to conform to a preset flow rate strategy is carried out; The preset flow rate strategy is that the gas flow rate in the output direction toward the pattern area (Pattern)of the photomask is 150 L/min and the gas flow rate in the output direction toward the thin film area (Pellicle) of the photomask is 80 L/min. The invention has the beneficial effects that since theinappropriate humidity is the main factor for the occurrence of Haze, the equipment aspect can reduce the humidity by adjusting the gas flow rate of the compressed dry air, thereby ensuring the precision of the equipment and improving the growth condition of Haze.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for reducing fog surface defects of a photomask through humidity modification. Background technique [0002] During the daily use of the mask in the fab, due to the influence of the environment, storage methods and other factors, haze defects (Haze) will occur, and it is still an unavoidable and unsolvable issue worldwide. [0003] Through data and theoretical analysis, it is found that the humidity of the mask stage (Reticle stage) of the ArF excimer laser equipment is 25% much higher than that of the immersion equipment (IMM) 5%, which leads to the harsh internal environment of the machine and is easy to breed Haze. The haze rate of ArF excimer laser equipment is very high, which can easily cause repeat defects and seriously affect the product yield. Contents of the invention [0004] Aiming at the problems existing in the prior art, the present invention r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/70025G03F7/70866
Inventor 王泊涛谢华王猛
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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