A Transient Voltage Suppressor with Low Voltage and Low Capacitance Triggering Characteristics

Abstract

The invention relates to a transient voltage suppressor with low voltage and low capacitance triggering characteristics, belonging to the field of electrostatic discharge protection and surge resistance of integrated circuits. The suppressor comprises a P substrate, an N well, a P well, a first P + implantation region, a first N + implantation region, a second P + implantation region, a second N +implantation region, a polysilicon gate and a thin gate oxide layer covered by the polysilicon gate, a third N + implantation region and a metal line. By embedding MOS, diode and special metal wiringin the SCR structure, the current path of diode-assisted triggering SCR and the current path of MOS-assisted triggering SCR are formed to reduce the triggering voltage of the device and improve the electrical overstress robustness of the device. The device area and parasitic capacitance of the device can be reduced and ESD and surge protection efficiency of the device can be enhanced.

Description

technical field [0001] The invention belongs to the field of electrostatic discharge protection and anti-surge of integrated circuits, relates to an ESD protection or anti-surge device, in particular to a transient voltage suppressor with low-voltage and low-capacitance trigger characteristics, which can be used to improve on-chip IC and electronic Product reliability. Background technique [0002] With the wide application of integrated manufacturing technology and integrated circuits, portable electronic products are becoming more and more popular in daily life, which brings great convenience to people's life. However, the high failure rate of electronic products and the weak stability of circuit systems still bring great troubles to the current research and application of electronic engineering. According to the survey, electrostatic discharge or transient surge is the main factor causing failure of electronic products, especially IC. And because ESD or surge is a commo...

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Problems solved by technology

[0004] Aiming at the problems of ESD protection and anti-surge robustness and large parasitic capacitance of traditional diode, MOS and SCR structures, the present invention proposes a transient voltage suppressor with low-voltage and low-capacitance trigger characteristics, through the SCR structure Embed MOS, diodes and special metal wiring design to form the current path of diode-assisted triggering SCR, and the current path of MOS-assisted triggering SCR, so as to reduce the trigger voltage of the device and improve the robustness of the device's electrical overstress

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