A kind of transient voltage suppressor and its manufacturing method

A technology of transient voltage suppression and manufacturing method, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of increasing device area and manufacturing cost, and achieve the effect of improving protection characteristics and reliability

Inactive Publication Date: 2019-12-24
江苏韩力新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently commonly used transient voltage suppressors can only achieve unidirectional protection. If bidirectional protection is required, multiple transient voltage suppressors must be connected in series or in parallel, which increases the device area and manufacturing cost.

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  • A kind of transient voltage suppressor and its manufacturing method
  • A kind of transient voltage suppressor and its manufacturing method
  • A kind of transient voltage suppressor and its manufacturing method

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Embodiment Construction

[0044] The invention will be described in more detail below with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0045] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0046] If it is to describe the situation directly on another layer or another area, the...

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Abstract

The invention provides a transient voltage suppressor and a manufacturing method thereof. The suppressor includes a substrate of a first conductivity type; afirst epitaxial layer of a second conductivity type grown on an upper surface of the substrate; adiffusion layer of a second conductivity type formed on a lower surface of the substrate; asecond epitaxial layer of a second conductivity type including a first portion disposed on an upper surface of the first epitaxial layer, the doping concentration of the second epitaxial layer being higher than the doping concentration of the first epitaxial layer; afirst implantation region of a second conductivity type formed on an upper surface of the first portion, the doping concentration of the first implantation region being higher than the doping concentration of the second epitaxial layer; afirst electrode electrically connected to the first injection region; and a second electrode electrically connected to the diffusion layer. This scheme can improve device performance and reduce device cost.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transient voltage suppressor and a manufacturing method thereof. Background technique [0002] Transient voltage suppressor is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, small leakage current and High reliability and other advantages, so it has been widely used in voltage transient and surge protection. Low capacitance is suitable for protection devices of high-frequency circuits, because it can reduce the interference of parasitic capacitance on the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge, as well as other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices. As semiconductor devices are increasingl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/861H01L21/329
CPCH01L29/0684H01L29/66136H01L29/8613
Inventor 王永贵阳林涛邱一平
Owner 江苏韩力新材料有限公司
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