A Low-Loss Optical Waveguide Phase Shifter Based on High-mobility TCO Thin Films

Abstract

The invention belongs to the field of integrated optics, in particular to a low-loss optical waveguide phase shifter based on a high-mobility TCO film. The device is prepared on the basis of an optical waveguide platform. From bottom to top, there are substrate, ridge-shaped silicon waveguide, hafnium dioxide layer, electro-optical functional material layer, hafnium dioxide cladding layer, and electrodes arranged on the surface of the electro-optic functional material layer and the silicon surface. The electro-optical functional material layer has a mobility greater than 200cm 2 V ‑1 s ‑1 TCO film. The device of the present invention is based on an optical waveguide platform and will be used in optical switching modulators with mobility greater than 200 cm 2 V ‑1 s ‑1 The TCO thin film is used as the electro-optical functional material layer, and the silicon waveguide phase shifter that realizes the electro-optic phase shift is compatible with the silicon manufacturing process. The modulation rate can reach more than 100GHz, and the insertion loss is less than 3dB.

Description

Technical field [0001] The invention belongs to the field of integrated optics, and specifically relates to a low-loss optical waveguide phase shifter based on a high-mobility TCO film. Background technique [0002] Silicon-based photonics has developed rapidly in recent years. This technology combines the ultra-large-scale, ultra-high-precision manufacturing characteristics of CMOS technology with the advantages of ultra-high speed and ultra-low power consumption of photonic technology. Silicon material is not only the most popular material platform for integrated circuits, but also has excellent optical properties; silicon waveguides are almost non-destructive and transparent to light with a wavelength of 1.1 to 1.6 μm, and are ideally compatible with existing optical communication technologies and devices, and are in the centimeter to thousand kilometers. The optical communication provides a highly integrated solution. [0003] As the basic unit of the optical communication sys...

AI Technical Summary

Problems solved by technology

The phase shifter based on the free carrier effect can achieve higher speed modulation, but the device size is large

Low device insertion loss can be achieved based on the thermo-optic effect, but its RC response time is usually only 1μs

[0004] Based on the principle of electro-optic phase shifting, it is theoretically more possible to realize a phase shifter with high-speed modulation and low loss. For example, lithium niobate itself has a high first-order linear electro-optic coefficient, but the current mainstream devices are based on silicon. into, which is not conducive to large-scale integration process

[0005] Silicon is a centrosymmetric crystal and does not have the first-order linear electro-optic effect (Pockets). Although it has the second-order electro-optic coefficient, this coefficient is very weak and cannot be practically used in phase shifters; therefore, it is compatible with the silicon preparation process and can realize electro-optic Phase-shifting silicon waveguide phase shifters are necessary

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