Low-loss optical waveguide phase shifter based on high-mobility TCO thin film

Abstract

The invention belongs to the field of integrated optics and particularly relates to a low-loss optical waveguide phase shifter based on a high-mobility TCO thin film. The device is prepared based on an optical waveguide platform and sequentially comprises a substrate, a ridged silicon waveguide, a hafnium oxide layer, an electrooptical functional material layer, a hafnium oxide cladding and electrodes arranged on the surface of the electrooptical functional material layer and the surface of silicon from bottom to top. The electrooptical functional material layer is a TCO thin film with mobility greater than 200cm<2>V<-1>s<-1>. According to the device, based on the optical waveguide platform, the TCO thin film, with the mobility greater than 200cm<2>V<-1>s<-1>, applied to an optical switchmodulator is used as the electrooptical functional material layer, the silicon waveguide phase shifter with electrooptical phase shift is compatible with a silicon preparation process, the modulationrate can reach 100GHz or above, and insertion loss is 3dB or below.

Description

technical field [0001] The invention belongs to the field of integrated optics, in particular to a low-loss optical waveguide phase shifter based on a high-mobility TCO film. Background technique [0002] Silicon-based photonics has developed rapidly in recent years. This technology combines the ultra-large-scale and ultra-high-precision manufacturing characteristics of CMOS technology with the advantages of ultra-high speed and ultra-low power consumption of photonic technology. Silicon material is not only the most popular material platform for integrated circuits, but also has excellent optical properties; silicon waveguides are nearly non-destructive and transparent to light with a wavelength of 1.1-1.6 μm, and are ideally compatible with existing technologies and devices for optical communication, ranging from centimeters to thousands of kilometers The optical communication provides a highly integrated solution. [0003] As the basic unit of the optical communication s...

AI Technical Summary

Problems solved by technology

The phase shifter based on the free carrier effect can achieve higher speed modulation, but the device size is large

Low device insertion loss can be achieved based on the thermo-optic effect, but its RC response time is usually only 1μs

[0004] Based on the principle of electro-optic phase shifting, it is theoretically more possible to realize a phase shifter with high-speed modulation and low loss. For example, lithium niobate itself has a high first-order linear electro-optic coefficient, but the current mainstream devices are based on silicon. into, which is not conducive to large-scale integration process

[0005] Silicon is a centrosymmetric crystal and does not have the first-order linear electro-optic effect (Pockets). Although it has the second-order electro-optic coefficient, this coefficient is very weak and cannot be practically used in phase shifters; therefore, it is compatible with the silicon preparation process and can realize electro-optic Phase-shifting silicon waveguide phase shifters are necessary

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