Method for manufacturing moissanite

A manufacturing method, moissanite technology, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve the adverse effects of SiC growth quality, particle fluidization and other problems, to avoid fluidization, improve quality effect

Inactive Publication Date: 2018-12-18
孙月静
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method of manufacturing moissanite to solve the problem that in the prior art when using C powder with a particle size of less than 10 microns, the chemical reaction that occurs during the production of SiC source materials can easily lead to particles Fluidization of SiC, resulting in the formation of deposits on the SiC seed, a technical problem that adversely affects the quality of SiC growth

Method used

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Embodiment Construction

[0014] Specific embodiments of the present invention will be further described below. It should be noted here that the descriptions of these embodiments are used to help understand the present invention, but are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not constitute a conflict with each other.

[0015] Preferred embodiment one of the present invention provides a kind of manufacture method of Moissanite, comprises the following steps:

[0016] S1. Select a suitable growth chamber, and combine silicon and carbon; the carbon is C powder, and the average diameter of the powder particles is greater than 10 microns; the silicon is silicon powder, and the average diameter of the silicon powder particles is 100 μm-400 μm; If the particle size is below the upper limit given above, all the carbon within the powder grain...

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Abstract

The invention discloses a method for manufacturing moissanite. The method comprises the following steps: selecting a suitable growth chamber, and adding silicon, carbon and SiC seed crystals into thegrowth chamber, wherein the carbon is C powder, and the average diameter of powder particles is greater than 10 [mu]m; and the silicon is silicon powder, and average diameter of silicon powder particles is 100-400 [mu]m; heating the growth chamber to 2000 DEG C, extracting air in the growth chamber at 2000 DEG C, and filling the growth chamber with an inert gas to make the pressure of the inert gas be 100-1000 mp; and heating the silicon and the carbon to a synthesis temperature ranging from 2000 to 2500 DEG C to chemically react the silicon with carbon in order to form SiC. The method avoidsthe fluidization of the carbon powder in the prior art and improves the quality of grown SiC single crystals.

Description

technical field [0001] The invention relates to the technical field of moissanite production, in particular to a method for manufacturing moissanite. Background technique [0002] Along with moissanite (a kind of silicon carbide), most of the moissanite on the market is artificially synthesized. Natural moissanite is very rare and only appears in craters. Its color is mostly dark green and black. Used as an abrasive, the appearance of moissanite is very similar to natural diamonds, and it is difficult to distinguish with the naked eye. It is also a semi-precious stone whose physical properties are closest to natural diamonds. [0003] In the prior art, when using C powder with a particle size smaller than 10 μm, the chemical reactions that occur during the production of SiC source materials can easily lead to fluidization of the particles, especially C powder, to form deposits on SiC seeds , adversely affect the quality of SiC growth. Contents of the invention [0004] T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B1/10
CPCC30B1/10C30B29/36
Inventor 孙月静
Owner 孙月静
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