The invention provides a preparation technology of ultrahigh-purity
silicon carbide powder applied to the field of semiconductors, the preparation technology comprises the following steps: selecting a carbon-
silicon polymer with a correct molecular structure and
element composition, purity, a liquid curing mode and a
granulation technology, and controlling pollutants in the processes of preparation, preparation, curing, thermal
cracking and the like, controlling the total content of impurities such as trace
pollution elements such as Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Ti, Ce, Cr, S, As and the like to be lower than 10ppm so that the
semiconductor grade
silicon carbide powder with the purity of 99999 or 999999 or higher purity is prepared, and the prepared
silicon carbide high-purity
powder can meet the requirements of purity, particle size, density, morphology and the like required by growth of
silicon carbide substrate wafers, coatings on
silicon carbide graphite epitaxial bases and
synthetic diamond moissanite crystals.