The present invention relates to the technical field of
moissanite production, and in particular to a method for manufacturing colorless
moissanite with high efficiency and high production capacity, the method comprising the following steps: (S.1)
cutting semi-insulating seed crystals to obtain seed crystals with regular shapes; (S.2)
coating glue on the surface of the seed crystals with regular shapes and arranging and splicing them to obtain large-sized spliced seed crystals; (S.3) bonding the large-sized spliced seed crystals to the surface of a flexible substrate, and then
coating glue on the other side of the flexible substrate; (S.4) bonding the flexible substrate together with the large-sized spliced seed crystals in a
physical vapor deposition device, and depositing
silicon carbide crystals on the surface of the large-sized spliced seed crystals by
physical vapor deposition, thereby forming colorless
moissanite. In the present application, small-sized seed crystals are
cut and spliced into large-sized spliced seed crystals, and the seeds are bonded to the surface of a flexible substrate for deposition, thereby reducing the
loss rate of moissanite while improving the preparation efficiency of colorless moissanite.