38 results about "Moissanite" patented technology

The invention relates to a moissanite gem with bright carving surface and cutting and grinding processing methods of the moissanite gem. For the moissanite gem, the crown angle is 34-35 degrees, the pavilion angle is 41-42 degrees, the table width is 49%-51%, the crown height is 17%-18%, the pavilion depth is 43%-44%, and the total depth is 62%-65%. The methods comprise cutting and grinding angle and proportions of various common bright cutting types of moissanite gems. According to specific properties of crystal axis orientation, refractive index, color, color, transparency and the like of the moissanite gems, after the cutting and grinding angles and proportions are adopted, comprehensive and optimized gloss, flicking and color of the curved-surface moissanite gems are displayed.

The invention relates to a colored moissanite gemstone and a preparation method thereof. According to the invention, impurity elements with different types are doped in 6H-SiC or 4H-SiC, such that the moissanite gemstone can be prepared. The impurity elements comprise background impurity elements N, B, and Al, and/or one or two intentionally doped impurity elements selected from Ti, V, Ni, N, and Ce. The preparation method of the colored moissanite gemstone comprises the steps that: seed crystal is placed on the bottom of an upper cap of a crucible; high-purity SiC powder or SiC powder with a doped doping agent is placed at the bottom of the crucible; and sublimation growth is carried out with a growth chamber pressure of 50-120mbar and a temperature increased to 2000-2500 DEG C. With the method, the prepared colored moissanite gemstones have uniform color and good transparency.

A cutting element for a rotary-type drill bit is disclosed comprising moissanite (silicon carbide) crystals impregnated within and/or coated on the surface of the cutting elements.

The invention provides a moissanite ornament, and the surface of the moissanite ornament is coated with a diamond film. The invention further provides a method for coating the diamond film on the surface of the moissanite ornament. The method comprises the following steps that S1, ultrasonic grinding pretreatment is conducted on the moissanite ornament in a nano-diamond powder suspension liquid; S2, the moissanite ornament is taken out of the nano-diamond powder suspension liquid and cleaned; S3, the moissanite ornament is pressed into a preset shape-preserving sample table to be kept; S4, themoissanite ornament and the shape-preserving sample table are together put into a diamond film depositing furnace for plasma treatment; and S5, methane is fed into the diamond film depositing furnace, and then in-situ diamond film deposition is conducted. According to the moissanite ornament with the surface coated with the diamond film, the optical properties of moissanite can be kept, and meanwhile the surface hardness can be greatly improved. Therefore, the scratch-resistant property of the moissanite is improved.

The invention relates to devices which exhibit some physical properties, namely thermal conductivity and electrical resistance of diamonds and their popular imitations, and method for manufacturing and usage of such device. These physical properties of gems are usually used by commercial gem testers for the purpose of distinguishing true diamonds from the fakes. The imitations are made of inexpensive metals, like brass and stainless steel, and conductive plastics, and can replace more costly diamonds and other gems, like moissanite, white sapphire, and others for the purpose of verification of correct operation of gem testing devices.

The invention provides a preparation technology of ultrahigh-purity silicon carbide powder applied to the field of semiconductors, the preparation technology comprises the following steps: selecting a carbon-silicon polymer with a correct molecular structure and element composition, purity, a liquid curing mode and a granulation technology, and controlling pollutants in the processes of preparation, preparation, curing, thermal cracking and the like, controlling the total content of impurities such as trace pollution elements such as Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Ti, Ce, Cr, S, As and the like to be lower than 10ppm so that the semiconductor grade silicon carbide powder with the purity of 99999 or 999999 or higher purity is prepared, and the prepared silicon carbide high-purity powder can meet the requirements of purity, particle size, density, morphology and the like required by growth of silicon carbide substrate wafers, coatings on silicon carbide graphite epitaxial bases and synthetic diamond moissanite crystals.

The invention provides a moissanite round diamond which comprises a crown portion, a waist portion and a pavilion portion. The moissanite round diamond is prepared through the steps of circular blank forming through synthesized moissanite raw blank crystals in an enclosing mode, horizontal large table facet grinding, kite facet cutting, star facet cutting, upper-waist small facet cutting, crown portion polishing, lower-waist small facet cutting, sword facet cutting, pavilion portion polishing, sulfuric acid soaking, alcohol cleaning and the like. According to the moissanite round diamond, the chromatic dispersion and refractive index differences existing between synthesized moissanite and a diamond are overcome, so that the prepared moissanite round diamond can achieve the eight-heart eight-arrow optical effect.

The invention discloses a method for manufacturing moissanite. The method comprises the following steps: selecting a suitable growth chamber, and adding silicon, carbon and SiC seed crystals into thegrowth chamber, wherein the carbon is C powder, and the average diameter of powder particles is greater than 10 [mu]m; and the silicon is silicon powder, and average diameter of silicon powder particles is 100-400 [mu]m; heating the growth chamber to 2000 DEG C, extracting air in the growth chamber at 2000 DEG C, and filling the growth chamber with an inert gas to make the pressure of the inert gas be 100-1000 mp; and heating the silicon and the carbon to a synthesis temperature ranging from 2000 to 2500 DEG C to chemically react the silicon with carbon in order to form SiC. The method avoidsthe fluidization of the carbon powder in the prior art and improves the quality of grown SiC single crystals.

The invention discloses a preparation method of blue mullite. The preparation of the blue mullite is realized by doping metallic aluminum or an aluminum-containing compound; a secondary crystallization method is combined with an inner crucible device to control the uniformity of the doped metallic aluminum so as to obtain blue mullite with uniform color. The preparation method comprises the following steps of: firstly, fully mixing high-purity silicon carbide powder with doped metallic aluminum or aluminum-containing compound; selecting polycrystalline mullite as a seed crystal in a crystal growth furnace to grow doped polycrystalline mullite by a physical vapor transport method; taking out the polycrystalline mullite, breaking and putting the polycrystalline mullite into an inner crucible; putting high-purity silicon carbide powder into the bottom of an outer crucible; selecting monocrystal mullite as a seed crystal to be subjected to physical vapor transport growth again, so as to obtain blue mullite with uniform color. The aluminum and silicon carbide powder are combined in the first growth, the aluminum is slowly released along with the gasification of the silicon carbide in the second growth process, and therefore, the aluminum uniformly enters the mullite, and color uniformity control is achieved.

The invention discloses a preparation method of multi-sized moissanite. With a silicon carbide crystal-porous graphite composite substrate, the back growth surface of the composite substrate adheres to the inner layer of an upper cover at the top of a graphite crucible, high purity silicon carbide powder material is put into the graphite crucible, and the graphite crucible is put into a crystal growing furnace; in a physical gas phase transfer crystal growing system, the crystal growing temperature is 1,900 to 2,400 DEG C, the substrate temperature is 1,900 to 2,300 DEG C, and the raw materialtemperature is 2,300-2,400 DEG C; crystals grow in inert gas atmosphere, the pressure in a reaction chamber ranges from 1 is multiplied by 10<-4> Pa to 4 is multiplied by 10<4> Pa, and the growing time is more than 70 hours. The moissanite crystals can be used as raw materials of moissanite jewels after simple cutting, and moissanite jewels of different sizes can be obtained through jewel processing.

The invention discloses an identification device for distinguishing natural diamonds, synthetic diamonds and moissanite based on a reflection method. The identification device comprises a lower cover, a middle frame and an upper cover. And a circuit board is arranged in the lower cover and is also connected with an ultraviolet light source and an ultraviolet spectrograph. The ultraviolet light source comprises a first light source and a second light source, the wavelength of the first light source is 250nm-280nm, and the wavelength of the second light source is 350nm-390nm. A Y-shaped optical fiber tube is further arranged in the lower cover, the first end of the Y-shaped optical fiber tube is right opposite to the ultraviolet light source, the second end of the Y-shaped optical fiber tube is connected with the ultraviolet spectrometer, and the third end of the Y-shaped optical fiber tube penetrates out of the middle frame and abuts against the surface of the diamond to be identified. The device has the beneficial effects that the device can quickly and accurately distinguish natural diamonds, synthetic diamonds and moissanite, and the distinguishing accuracy can reach 99% or above. Moreover, the device is small in overall size, convenient to carry, simple to operate, low in manufacturing cost and particularly suitable for diamond manufacturers, jewelry manufacturers, detection stations and the like with large usage amounts.

The invention discloses a moissanite surface treatment technology. The moissanite surface treatment technology comprises the following steps that firstly, moissanite is placed in deionized water at 45-55 DEG C to be subjected to ultrasonic washing for 1-2 h, the ultrasonic power is 10-50 W, ultrasonic treatment is conducted for 10-20 min, and then, the moissanite is taken out and subjected to airdrying till the surface water content is 4-10%. According to the moissanite surface treatment technology, ultrasonic washing is conducted, surface soil containing impurities and other impurities are removed, then, high-purity nitrogen high-temperature treatment is conducted, and sparse deterioration happens to the moissanite surface structure, so that the moissanite surface structure is easily treated through first-level treating fluid; and through first-level treating fluid treatment, metal impurities are removed firstly, and meanwhile the moissanite can be finely ground through added silicondioxide.

The invention discloses an effective method for preparing multi-size annular mullite, which comprises the following steps: using a silicon carbide single crystal substrate multi-size annular graphitecylinder composite substrate; adhering the back surface of the composite substrate to the inner layer of a graphite crucible cover, adhering an annular graphite cylinder to the growth surface of the substrate, putting a high-purity silicon carbide raw material into the bottom in a graphite crucible, and performing crystal growth by adopting a physical vapor transport method to obtain the annular mullite, so the annular mullite can be more conveniently processed into annular ornaments with different pore diameters.

The invention relates to a grating for novel sewage treatment equipment. The grating comprises, by weight, 60-70 parts of iron, 50-58 parts of carbon, 45-48 parts of silicon, 27-30 parts of manganese,22-24 parts of copper, 5-8 parts of bismuth oxide, 5-8 parts of cerium oxide, 5-8 parts of stannic oxide and 1-2 parts of moissanite powder. The grating for the novel sewage treatment equipment is excellent in property and easy to machine.

The invention relates to a synthetic moissanite stone of imitating a tourmaline and a preparation method thereof. The tourmaline comprises a green tourmaline and a multi-color tourmaline, wherein N impurities are doped into a growth system of 6H-SiC and 4H-SiC, so as to obtain green moissanite single crystal similar to the green tourmaline. The invention also provides a method for preparing the imitated multi-color tourmaline. The moissanite material of green and multi-color tourmalines disclosed by the invention has the characteristics of being pure in color, high in refractive index, large in hardness, and strong in chromatic dispersion, and the processed gemstone product is similar to the tourmaline in color, and is higher in brightness, stronger in fire, and more excellent in durability.

The invention discloses an identification device for distinguishing natural diamonds, synthetic diamonds and moissanite based on a transmission method. Herein, an accommodating cavity is enclosed by a base and a bottom plate, a battery, a main control board and a circuit board are arranged in the accommodating cavity, and an ultraviolet receiver is arranged on the circuit board; an accommodating through hole for placing a to-be-identified diamond is formed in the base and is opposite to the ultraviolet receiver; a light shield is hinged to the base, an ultraviolet light source connected with the circuit board is arranged in the light shield and comprises a first light source and a second light source, the wavelength of the first light source ranges from 250 nm to 280 nm, and the wavelength of the second light source ranges from 350 nm to 390 nm. The device has the beneficial effects that the device can quickly and accurately distinguish natural diamonds, synthetic diamonds and moissanite, the distinguishing accuracy can reach 99% or above, and the speed is high to identify one diamond per second. Moreover, the identification device is simple to operate, low in manufacturing cost and suitable for diamond manufacturers, jewelry manufacturers, detection stations and the like with large use amounts.

The invention relates to a novel outer frame material for a solar cell panel. The novel outer frame material for the solar cell panel comprises, by weight, 68-86 parts of aluminum alloy, 27-44 parts of manganese, 21-30 parts of magnesium carbide, 5-10 parts of Moissanite powder, and 1-4 parts of tungsten fibers. The novel outer frame material for the solar cell panel is excellent in performance, high in strength, resistant to corrosion, and easy to machine.

The invention discloses a gem identification device and method based on thermal conductivity and surface resistivity. The device comprises a thermal conductivity sensor, a sensor temperature measurement and heating control module, a signal operational amplifier module, an AD acquisition module, a temperature and humidity sensor detection module, a high voltage generation module, an electric conductivity detection module, a single-chip microcomputer module, a memory module, a sensor probe contact metal alarm module, a low voltage detection module, a display module, a buzzer alarm module, a communication module, a voltage stabilization module, a power supply control module and a button module. The device and method are used for identifying and distinguishing diamonds, laboratory cultured diamonds, mullite, red sapphire, emerald, crystals, jadeite, spinel, tourmaline, topaz, tanzanite, garnet, cordierite, olivine, quartz, topaz and other gems, and are high in identification accuracy and wide in application range.

The invention relates to a high-performance sealing door installation seat material, which comprises: 40-50 parts of iron, 25-32 parts of manganese, 15-19 parts of magnesium carbide, 11-16 parts of ceramic powder, 8-13 parts of chromium oxide, 5-7 parts of zinc sulfide, 2-4 parts of phosphorus, and 1-2 parts of moissanite powder. The high-performance sealing door installation seat material of thepresent invention has characteristics of easy processing, excellent mechanical property, wear resistance and long service life.