Preparation method of multi-sized moissanite

A moissanite, multi-size technology, applied in chemical instruments and methods, polycrystalline material growth, steam from condensation, etc., can solve the problems of low gem production efficiency, difficult gem processing, and high consumption costs

Inactive Publication Date: 2019-07-23
NANTONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Because the hardness of moissanite is close to that of diamond, the gem processing process such as cutting, grinding and polishing is relatively difficult and the consumption cost is also high
Especially when cutting large-

Method used

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  • Preparation method of multi-sized moissanite
  • Preparation method of multi-sized moissanite
  • Preparation method of multi-sized moissanite

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Embodiment

[0028] Aiming at the above-mentioned difficulties existing in the prior art, the present invention provides a method for preparing multi-size moissanite, by using a silicon carbide crystal-porous graphite composite substrate, the back of which is fixed on the inner surface of the graphite crucible lid , the growth surface is placed opposite to the silicon carbide powder raw material; the sealed graphite crucible is placed in a heating furnace for moissanite growth, the growth temperature is in the range of 1900°C-2400°C, the substrate temperature is 1900°C-2300°C, and the raw material The temperature is 2300°C-2400°C, the temperature gradient is 20-50°C / cm, the growth is under an inert gas atmosphere, and the pressure in the reaction chamber is 1×10 -4 Pa-4×10 4 Between Pa, the growth time is more than 70 hours, and moissanite with different sizes can be obtained; the obtained moissanite can be directly used as gem raw material for later gem processing.

[0029] In order to s...

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Abstract

The invention discloses a preparation method of multi-sized moissanite. With a silicon carbide crystal-porous graphite composite substrate, the back growth surface of the composite substrate adheres to the inner layer of an upper cover at the top of a graphite crucible, high purity silicon carbide powder material is put into the graphite crucible, and the graphite crucible is put into a crystal growing furnace; in a physical gas phase transfer crystal growing system, the crystal growing temperature is 1,900 to 2,400 DEG C, the substrate temperature is 1,900 to 2,300 DEG C, and the raw materialtemperature is 2,300-2,400 DEG C; crystals grow in inert gas atmosphere, the pressure in a reaction chamber ranges from 1 is multiplied by 10<-4> Pa to 4 is multiplied by 10<4> Pa, and the growing time is more than 70 hours. The moissanite crystals can be used as raw materials of moissanite jewels after simple cutting, and moissanite jewels of different sizes can be obtained through jewel processing.

Description

technical field [0001] The invention relates to a preparation method of moissanite, in particular to a preparation method of multi-size moissanite. Background technique [0002] Crystal material is a common gem raw material. As a perfect external embodiment of gem material, it mainly manifests in characteristics such as refractive index, hardness, and physical and chemical stability. The sparkle of gemstones is mainly reflected by the refractive index, the hardness reflects the ability of gemstones to resist damage, and the physical and chemical stability is to ensure that the gemstones will not change after long-term wearing and storage. [0003] Moissanite is a silicon carbide gemstone. It has been discovered for more than 100 years. Natural moissanite grains were first discovered in 1905. Synthetic moissanite crystals were accidentally discovered by American Acheson during experiments in 1891. Moissanite is an inorganic compound with strong covalency, high melting point ...

Claims

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Application Information

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IPC IPC(8): C30B29/36C30B23/02
CPCC30B23/025C30B29/36
Inventor 杨培培李祥彪仲崇贵
Owner NANTONG UNIVERSITY
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