Colored moissanite gemstone and preparation method thereof
A color moissanite and moissanite technology, applied in the field of artificial synthetic gemstones, can solve the problems of limited output, slow growth rate, limited color types, etc., and achieve the effect of uniform color and good transparency
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Embodiment 1
[0047] Embodiment 1, deep champagne color moissanite gem, preparation method is as follows:
[0048] The seed crystal is placed at the bottom of the upper cover of the crucible, and the SiC powder doped with dopant VC is placed at the bottom of the crucible. The pressure of the growth chamber is 50-120mbar, and the temperature is raised to 2000-2500°C, and the SiC powder at the bottom is decomposed into Si and SiC 2 and Si 2 The three main gas phase components of C are transported to the surface of the seed crystal at a lower temperature, and through deposition, the crystal grows continuously, and at the same time, the V doping amount reaches an atomic concentration of 1×10 17 / cm 3 ~1×10 18 / cm 3 , to get deep champagne color moissanite gemstones, such as figure 1 shown.
Embodiment 2
[0049] Embodiment 2, dark green moissanite gem, preparation method is as follows:
[0050] The seed crystal is placed at the bottom of the upper cover of the crucible, and the high-purity SiC powder is placed at the bottom of the crucible. The pressure of the growth chamber is 50-120mbar, and the temperature is raised to 2000-2500°C, and the SiC powder at the bottom is decomposed into Si and SiC 2 and Si 2 The three main gas phase components, C, are transported to the surface of the seed crystal at a lower temperature, and through deposition, the crystal grows continuously. During the growth process, by passing an appropriate amount of N 2 , so that the concentration of N doped in 6H-SiC reaches 2×10 19 / cm 3 ~2×10 20 / cm 3 , to get a dark green moissanite gem. Such as figure 2 shown.
Embodiment 3
[0051] Embodiment 3, brown moissanite gem, preparation method is as follows:
[0052] It can be achieved by controlling the concentration of background impurity elements in 6H-SiC. It is only necessary to ensure that the concentration ranges of background impurity elements N (n-type), B, and Al (p-type) in moissanite crystals are 1×10 17 / cm 3 ~5×10 17 / cm 3 , 1×10 16 / cm 3 ~2×10 17 / cm 3 , 5×10 15 / cm 3 ~5×10 16 / cm 3 , place the seed crystal at the bottom of the upper cover of the crucible, and place the high-purity SiC powder at the bottom of the crucible. The pressure of the growth chamber is 50-120mbar, and the temperature is raised to 2000-2500°C, and the SiC powder at the bottom is decomposed into Si and SiC 2 and Si 2 The three main gas phase components, C, are transported to the surface of the seed crystal at a lower temperature, and through deposition, the crystal grows continuously. Thereby obtaining brown moissanite gemstones such as image 3 shown. ...
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