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Preparation method of flower-color moissanite gemstone

A silicon carbide and silicon carbide single crystal technology, applied in chemical instruments and methods, from condensed steam, single crystal growth, etc., can solve the problem that it is difficult to obtain silicon carbide gemstones with more than two colors at the same time

Active Publication Date: 2019-07-23
NANTONG UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The colored silicon carbide gemstones obtained by controlling growth factors are generally the same color, and it is difficult to obtain fancy silicon carbide gemstones with more than two colors at the same time

Method used

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  • Preparation method of flower-color moissanite gemstone
  • Preparation method of flower-color moissanite gemstone

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preparation example Construction

[0029] A preparation method of colored silicon carbide gemstone, comprising the following steps:

[0030] (1) After the growth surface of the silicon carbide single crystal substrate 3 used is patterned, the silicon surface of the silicon carbide single crystal substrate has a planar structure, and the carbon surface has a corrugated or stepped opening structure. One side of the planar structure of the silicon carbide single crystal substrate is fixed on the inner top of the upper cover of the graphite crucible 4 .

[0031] According to a specific embodiment of the present invention, the material of the patterned silicon carbide single crystal substrate and the specific shape of the patterned opening structure are not specifically limited. According to some specific embodiments of the present invention, the material of the patterned silicon carbide single crystal substrate is a silicon carbide single wafer, and the crystal type is a 4H-, 6H-, 15R- or other α-type silicon carbi...

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Abstract

The invention discloses a preparation method of a flower-color moissanite gemstone. The preparation method disclosed by the invention has the beneficial effects that a graphical silicon-carbide monocrystal substrate is used, the back surface of the substrate is stuck on an inner layer of an upper cover of the top of a graphite crucible, a high-purity silicon-carbide material is placed in the graphite crucible, the graphite crucible is placed in a crystal growing furnace, a crystal growing system adopts a physical vapor transferring method, the crystal growing temperature is 1800-2600 DEG C, wherein the temperature of the substrate is 2300 DEG C or below, the raw material temperature is higher than 2300 DEG C, a crystal grows under an argon atmosphere, the air pressure in a reaction chamberis 1-4 kPa, the growing time is 60 hours or above, and a silicon-carbide crystal is obtained to be used as a raw material of the moissanite gemstone; the flower-color moissanite gemstones with flowercolors such as yellow green and brownish-green can be obtained by gemstone processing.

Description

technical field [0001] The invention relates to a method for preparing silicon carbide gemstones, in particular to a method for preparing colored silicon carbide gemstones. Background technique [0002] Crystal material is a common gem raw material. As a perfect external embodiment of gem material, it mainly manifests in characteristics such as refractive index, hardness, and physical and chemical stability. The sparkle of gemstones is mainly reflected by the refractive index, the hardness reflects the ability of gemstones to resist damage, and the physical and chemical stability is to ensure that the gemstones will not change after long-term wearing and storage. [0003] Silicon carbide gem, also known as moissanite, has been discovered for more than 100 years. Natural silicon carbide grains were first discovered in 1905, and synthetic silicon carbide crystals were accidentally discovered by American Acheson during experiments in 1891. Silicon carbide is an inorganic compo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/02
CPCC30B23/025C30B29/36
Inventor 李祥彪仲崇贵杨培培魏明杰罗礼进刘勇渠莉华周朋霞
Owner NANTONG UNIVERSITY
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