Preparation technology of ultrahigh-purity silicon carbide powder applied to field of semiconductors

Abstract

The invention provides a preparation technology of ultrahigh-purity silicon carbide powder applied to the field of semiconductors, the preparation technology comprises the following steps: selecting a carbon-silicon polymer with a correct molecular structure and element composition, purity, a liquid curing mode and a granulation technology, and controlling pollutants in the processes of preparation, preparation, curing, thermal cracking and the like, controlling the total content of impurities such as trace pollution elements such as Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Ti, Ce, Cr, S, As and the like to be lower than 10ppm so that the semiconductor grade silicon carbide powder with the purity of 99999 or 999999 or higher purity is prepared, and the prepared silicon carbide high-purity powder can meet the requirements of purity, particle size, density, morphology and the like required by growth of silicon carbide substrate wafers, coatings on silicon carbide graphite epitaxial bases and synthetic diamond moissanite crystals.

Description

technical field [0001] The present invention relates to the field of semiconductor materials such as electric power and electronics industry, especially silicon carbide single crystal material, silicon carbide epitaxial base, and more specifically relates to a kind of high-purity carbonized silicon carbide single crystal growth and silicon carbide epitaxial base. Preparation method of silicon powder material. Background technique [0002] Power electronics is an important supporting technology in the field of national economy and national security. With the rapid development of the information industry and the progress of microelectronics technology, new electronic devices are moving towards the direction of withstand voltage, large capacity, frequency, reliability and integration Development, SiC single crystal, as the third-generation wide bandgap semiconductor material, has properties such as wide bandgap, high thermal conductivity, high electron saturation migration rate...

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Problems solved by technology

This method is different from organic synthesis methods, does not require special catalysts and the method has low cost of raw materials and simple synthesis process, but the patent does not introduce specific details

[0010] Through the analysis of the above invention patents, we found that any method has defects. They either cannot guarantee the purity of raw materials such as silicon sources and carbon sources, or the introduction of catalysts in the reaction process affects the content of metal impurities in the final silicon carbide material. Although some technologies The purity can be guaranteed, but because the specific implementation details have not been announced, the specific industrialization efficiency is questionable

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