Preparation technology of ultrahigh-purity silicon carbide powder applied to field of semiconductors

A silicon carbide powder, silicon carbide technology, applied in carbon compounds, inorganic chemistry, nitrogen compounds, etc., can solve the problems of inability to guarantee the purity of raw materials, doubts about industrialization efficiency, and lack of introduction.

Pending Publication Date: 2021-11-05
北京纳斯特克纳米科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This method is different from organic synthesis methods, does not require special catalysts and the method has low cost of raw materials and simple synthesis process, but the patent does not introduce specific details
[0010] Through the analysis of the above invention patents, we found that any method has defects. They either cannot guarantee the purity of raw material

Method used

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  • Preparation technology of ultrahigh-purity silicon carbide powder applied to field of semiconductors
  • Preparation technology of ultrahigh-purity silicon carbide powder applied to field of semiconductors
  • Preparation technology of ultrahigh-purity silicon carbide powder applied to field of semiconductors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0196]Formulation of silicon-carbon-containing polymer formulations using a hybrid approach. The formulation was prepared by mixing 41% MHF and 59% TV at room temperature. The precursor formulation has 0.68 moles of hydrogen, 0.68 moles of vinyl and 1.37 moles of methyl groups. The precursor formulation has the following molar amounts of Si, C and O based on 100 g of formulation.

[0197] According to calculations, the SiOC derived from the formulation had a calculated 1.37 moles of C with 0% excess C after all CO had been removed.

Embodiment 2

[0199] Formulation of silicon-carbon-containing polymer formulations using a hybrid approach. The formulation was prepared by mixing 90% methyl terminated phenylethyl polyoxysilane (with 27% X) and 10% TV at room temperature. The precursor formulation has 1.05 moles of hydrogen, 0.38 moles of vinyl, 0.26 moles of phenyl and 1.17 moles of methyl groups. Based on 100 g of formulation, the precursor formulation has the following molar amounts of SiSO. According to calculations, the SiOC derived from the formulation, after all CO has been removed, will have a calculated 2.31 moles of C with a 98% excess of C .

Embodiment 3

[0201] Formulation of silicon-carbon-containing polymer formulations using a hybrid approach. The formulation was prepared by mixing 70% methyl terminated phenylethyl polyoxysilane (with 14% X) and 30% TV at room temperature. The precursor formulation has 0.93 moles hydrogen, 0.48 moles vinyl, 0.13 moles phenyl and 1.28 moles methyl. Based on 100 g of formulation, the precursor formulation has the following molar amounts of Si, C, O; it is calculated that the SiOC derived from the formulation, after all CO has been removed, will have a calculated 1.77 moles of C and have 38% excess C.

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Abstract

The invention provides a preparation technology of ultrahigh-purity silicon carbide powder applied to the field of semiconductors, the preparation technology comprises the following steps: selecting a carbon-silicon polymer with a correct molecular structure and element composition, purity, a liquid curing mode and a granulation technology, and controlling pollutants in the processes of preparation, preparation, curing, thermal cracking and the like, controlling the total content of impurities such as trace pollution elements such as Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Ti, Ce, Cr, S, As and the like to be lower than 10ppm so that the semiconductor grade silicon carbide powder with the purity of 99999 or 999999 or higher purity is prepared, and the prepared silicon carbide high-purity powder can meet the requirements of purity, particle size, density, morphology and the like required by growth of silicon carbide substrate wafers, coatings on silicon carbide graphite epitaxial bases and synthetic diamond moissanite crystals.

Description

technical field [0001] The present invention relates to the field of semiconductor materials such as electric power and electronics industry, especially silicon carbide single crystal material, silicon carbide epitaxial base, and more specifically relates to a kind of high-purity carbonized silicon carbide single crystal growth and silicon carbide epitaxial base. Preparation method of silicon powder material. Background technique [0002] Power electronics is an important supporting technology in the field of national economy and national security. With the rapid development of the information industry and the progress of microelectronics technology, new electronic devices are moving towards the direction of withstand voltage, large capacity, frequency, reliability and integration Development, SiC single crystal, as the third-generation wide bandgap semiconductor material, has properties such as wide bandgap, high thermal conductivity, high electron saturation migration rate...

Claims

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Application Information

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IPC IPC(8): C01B21/068C01B32/963C04B35/565C04B35/584C04B35/622C04B35/626
CPCC01B21/068C01B32/963C04B35/584C04B35/565C04B35/622C04B35/62605C01P2006/12C04B2235/96C04B2235/9607C04B2235/77C01P2006/80
Inventor 周曦东刘兰英
Owner 北京纳斯特克纳米科技有限责任公司
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