Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of semiconductor device and its manufacturing method, electronic device

A manufacturing method and semiconductor technology, which can be applied to semiconductor devices, electric solid state devices, circuits, etc., can solve the problems of poor consistency, poor device performance and yield, etc.

Active Publication Date: 2021-09-14
SEMICON MFG INT (BEIJING) CORP +1
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The interface between two layers of polysilicon will increase the polysilicon resistance and lead to poor consistency of Rs (sheet resistance, that is, resistance per unit area and unit length), which will cause device performance and yield to deteriorate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] The following will refer to Figure 3A ~ Figure 3E A method for fabricating a semiconductor device according to an embodiment of the present invention will be described in detail.

[0061] First, a semiconductor substrate 300 including at least a logic region 300A and a flash memory region 300B is provided. A gate oxide layer 301 is formed on the semiconductor substrate of the logic region 300A and the flash memory region 300B, and a floating gate material layer 302 and an isolation layer on the floating gate material layer 302 are formed on the semiconductor substrate of the flash memory region 100B. material layer 303, the formed structure is as Figure 3A shown.

[0062] Wherein, the semiconductor substrate 300 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also includes multiple semiconductors composed of these semiconductors. The layer structure or the like may be silico...

Embodiment 2

[0084] The present invention also provides a semiconductor device, such as Figure 4 As shown, the semiconductor device includes: a semiconductor substrate 400, the semiconductor substrate 400 at least includes a logic region 400A and a flash memory region 400B, and a gate oxide layer 401 is formed on the semiconductor substrate of the logic region 400A and the flash memory region 400B; Formed on the semiconductor substrate of the logic region 400A are a logic gate 402, a spacer 403 on the sidewall of the logic gate 402, and silicides 404 on both sides of the logic gate; in the semiconductor substrate of the flash memory region 400B, A selection gate stack structure 405 and a control gate stack structure 406 are formed on the substrate; the selection gate stack structure 405 includes a first floating gate 407A located on the gate oxide layer 401, and a first floating gate 407A located on the first floating gate 407A. The first isolation layer 408A and the selection gate 409A l...

Embodiment 3

[0090] Still another embodiment of the present invention provides an electronic device, including a semiconductor device and an electronic component connected to the semiconductor device. Wherein, the semiconductor device includes: a semiconductor substrate, the semiconductor substrate includes a flash memory area, a selection gate stack structure is formed on the semiconductor substrate of the flash memory area, and the selection gate stack structure includes a The first floating gate on the first floating gate, the first isolation layer located on the first floating gate, and the selection gate located on the first isolation layer, and an exposed layer is formed in the selection gate and the isolation layer. The isolation layer window below the first floating gate.

[0091]Wherein, the semiconductor substrate can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, including multilayers composed o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a semiconductor device, a manufacturing method thereof, and an electronic device. The manufacturing method includes: providing a semiconductor substrate, the semiconductor substrate including a flash memory area, and forming a floating gate material layer and a floating gate material layer on the semiconductor substrate of the flash memory area. An isolation material layer located above the floating gate material layer; forming a gate material layer covering the semiconductor substrate and the isolation material layer; forming an isolation layer window in the gate material layer to expose the underlying Isolation material layer; patterning the gate material layer, the isolation material layer and the floating gate material layer of the flash memory area to form a selection gate stack structure; removing the first isolation layer located in the isolation layer part of the bottom of the window to expose the first floating gate below the window of the isolation layer. The manufacturing method can improve the resistance and uniformity of the polysilicon, make the performance of the device closer to the target performance, and reduce the manufacturing cost of the device. The semiconductor device and electronic device have similar advantages.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] The embedded flash memory technology integrates the logic process and the flash memory process. Due to the different requirements of the two processes, it is necessary to balance the two processes. In flash memory cells, since the ONO (inter-gate isolation layer) that has been formed needs to be etched in the formation of the select gate to realize the upper and lower interconnections, the control gate (CG) and the select gate (SG) need to go through two polysilicon deposition processes. form. Therefore, the two polysilicon deposition processes will cause the logic gates in the embedded device to also be formed by two polysilicon deposition processes. The interface between two layers of polysilicon will increase the polysilicon resistance and lead to po...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11524H01L27/11558H10B41/35H10B41/60
CPCH10B41/35H10B41/60
Inventor 王新鹏
Owner SEMICON MFG INT (BEIJING) CORP