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A composite buffer layer epitaxial structure for improving LED production efficiency

A technology of composite buffer layer and epitaxial structure, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of insufficient crystal quality of GaN materials, and achieve the effects of reducing production costs, improving production efficiency, and improving luminous efficiency.

Pending Publication Date: 2019-01-04
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method only uses AlN as a buffer layer, without using Al 2 o 3 Buffer layer, GaN material crystal quality is not high enough

Method used

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  • A composite buffer layer epitaxial structure for improving LED production efficiency

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Embodiment 1

[0029] In this embodiment, the sapphire pattern substrate is used as the growth substrate, and Al is first prepared on the sapphire pattern substrate by the atomic layer deposition method. 2 o 3 / AlN periodic structure that is the composite buffer layer, and then MOCVD method is used in the Al 2 o 3 / AlN periodic structure of the sapphire substrate prepared LED epitaxial structure. The specific preparation method is as follows:

[0030] (1) Firstly, Al was prepared on a sapphire pattern substrate by atomic layer deposition method. 2 o 3 / AlN periodic structure, preparation of Al 2 o 3 When layering, trimethylaluminum and water are used as reaction sources, the feeding time of trimethylaluminum, purge, water and re-purge are respectively 0.2s, 3s, 0.2s and 3s, the growth temperature is 300℃, the thickness 4.6nm; when preparing the AlN layer, trimethylaluminum and ammonia are used as the reaction source, and the feeding time of trimethylaluminum, purging, ammonia and re-p...

Embodiment 2

[0038] In this embodiment, the sapphire pattern substrate is used as the growth substrate, and Al is first prepared on the sapphire pattern substrate by the atomic layer deposition method. 2 o 3 / AlN periodic structure that is the composite buffer layer, and then MOCVD method is used in the Al 2 o 3 / AlN periodic structure of the sapphire substrate prepared LED epitaxial structure. The specific preparation method is as follows:

[0039] (1) Firstly, Al was prepared on a sapphire pattern substrate by atomic layer deposition method. 2 o 3 / AlN periodic structure, preparation of Al 2 o 3 When layering, use trimethylaluminum and water as the reaction source, the feeding time of trimethylaluminum, purge, water and re-purge are respectively 0.2s, 1s, 0.1s and 5s, the growth temperature is 350℃, the thickness 5nm; when preparing the AlN layer, trimethylaluminum and ammonia are used as the reaction source, and the feeding time of trimethylaluminum, purging, ammonia and re-purgi...

Embodiment 3

[0047] In this embodiment, the sapphire pattern substrate is used as the growth substrate, and Al is first prepared on the sapphire pattern substrate by the atomic layer deposition method. 2 o 3 / AlN periodic structure that is the composite buffer layer, and then MOCVD method is used in the Al 2 o 3 / AlN periodic structure of the sapphire substrate prepared LED epitaxial structure. The specific preparation method is as follows:

[0048] (1) Firstly, Al was prepared on a sapphire pattern substrate by atomic layer deposition method. 2 o 3 / AlN periodic structure, preparation of Al 2 o 3 When layering, trimethylaluminum and water are used as reaction sources, the feeding times of trimethylaluminum, purge, water and re-purge are respectively 0.5s, 10s, 0.5s and 1s, the growth temperature is 200℃, the thickness 5nm; when preparing the AlN layer, trimethylaluminum and ammonia are used as the reaction source, and the feeding time of trimethylaluminum, purging, ammonia and re-p...

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Abstract

The invention provides a composite buffer layer epitaxial structure for improving the LED production efficiency, wherein the epitaxial structure is a laminated structure in which a sapphire substrate,a composite buffer layer, an unintentionally doped high-temperature GaN layer, an n-type GaN layer, an InGaN / GaN multiple quantum well layer, a p-type AlGaN layer and a p-type GaN layer are laminatedin this order. The epitaxial structure of the invention has no low-temperature GaN buffer layer between the sapphire substrate and the unintentionally doped high-temperature GaN layer, only a composite buffer layer exists, and the composite buffer layer is of an Al2O3 / AlN periodic structure prepared by a non-MOCVD method. The structure not only improves the luminous efficiency of a GaN-based LED,but also improves the production efficiency and reduces the production cost.

Description

technical field [0001] The invention belongs to the field of GaN-based LED production, and in particular relates to a composite buffer layer epitaxial structure for improving LED production efficiency. Background technique [0002] In the mass production of GaN-based LEDs, epitaxial production is one of the key links. The adoption of key technologies in epitaxial production has promoted the large-scale application of GaN-based LEDs, and the large-scale application of GaN-based LEDs has also promoted the improvement of key technologies in epitaxial production. They are complementary and indispensable. Among the many key technologies of epitaxy, buffer layer technology plays a huge role. Due to the serious lattice mismatch between GaN and sapphire, low-temperature GaN buffer layer technology needs to be used in the large-scale epitaxial production of GaN-based LEDs to reduce stress and improve the crystal quality of GaN materials. In order to further improve the crystal qual...

Claims

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Application Information

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IPC IPC(8): H01L33/12H01L33/00
CPCH01L33/0066H01L33/0075H01L33/12
Inventor 孙一军程志渊盛况周强孙颖
Owner ZHEJIANG UNIV