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Display substrate, manufacturing method thereof, and display device

A technology of display substrate and manufacturing method, which is applied to electrical components, electric solid-state devices, circuits, etc., can solve the problems of decreased overall yield of display substrates and easy accumulation of charges, so as to reduce the probability of ESD, reduce the probability of accumulating charges, The effect of improving yield

Active Publication Date: 2019-01-08
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in the wiring area of ​​the display substrate, the organic film at the crossing position of the gate line and the data line is easy to accumulate charges. Once the accumulation is too much, the charge will be released to produce ESD (Electro-Static discharge, electrostatic discharge) phenomenon, making the display The overall yield of the substrate decreases

Method used

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  • Display substrate, manufacturing method thereof, and display device
  • Display substrate, manufacturing method thereof, and display device
  • Display substrate, manufacturing method thereof, and display device

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Embodiment Construction

[0041] In order to make the technical problems, technical solutions, and advantages to be solved by the embodiments of the present invention clearer, a detailed description will be given below with reference to the drawings and specific embodiments.

[0042] figure 1 It is a schematic diagram of the wiring area of ​​the existing display substrate, such as figure 1 As shown, the wiring area is provided with a gate line 1 and a data line 2, wherein the intersection of the gate line 1 and the data line 2 is covered with an organic film 3, due to the level difference at the intersection of the gate line 1 and the data line 2. In the coating process of the organic film 3, due to the influence of the step difference, it is very easy to generate charge accumulation at the intersection of the gate line 1 and the data line 2. Once the accumulation is too large, the charge will be released and the ESD phenomenon will occur, such as figure 2 As shown, 4 is a position where ESD occurs, and th...

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Abstract

The invention provides a display substrate and a manufacturing method thereof, and a display device belongs to the technical field of display. Wherein the trace region of the display substrate includes a first region at a position where gate lines and data lines intersect and a second region other than the first region, The display substrate comprises a thin film transistor and a passivation layercovering the thin film transistor, wherein an organic film is arranged on the passivation layer, and the organic film comprises a hollow part corresponding to at least the first region. By adopting the technical proposal of the invention, the yield of the display substrate can be improved.

Description

Technical field [0001] The present invention relates to the field of display technology, in particular to a display substrate, a manufacturing method thereof, and a display device. Background technique [0002] In the prior art, when a display substrate is made, after a passivation layer covering the thin film transistor is formed, an organic film is formed on the passivation layer, and a pixel electrode is formed on the organic film. The thickness of the organic film is relatively large, reaching the micron level. The organic film can increase the distance between the thin film transistor of the display substrate and the pixel electrode, reduce the parasitic capacitance of the display substrate, and thereby reduce the power consumption of the display substrate. [0003] However, in the wiring area of ​​the display substrate, the organic film at the intersection of the gate line and the data line is easy to accumulate charge. Once the accumulation is too large, the charge will be ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32
CPCH10K59/00H10K59/121H10K59/12H10K59/131
Inventor 彭俊林罗道源杨增乾冯耀耀孙剑秋刘增利
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD