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Display substrate, manufacturing method thereof, and display device

A technology for display substrates and manufacturing methods, applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of lower overall yield of display substrates and easy accumulation of charges, so as to reduce the probability of ESD, reduce the probability of accumulated charges, and improve The effect of yield

Active Publication Date: 2020-10-02
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in the wiring area of ​​the display substrate, the organic film at the crossing position of the gate line and the data line is easy to accumulate charges. Once the accumulation is too much, the charge will be released to produce ESD (Electro-Static discharge, electrostatic discharge) phenomenon, making the display The overall yield of the substrate decreases

Method used

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  • Display substrate, manufacturing method thereof, and display device
  • Display substrate, manufacturing method thereof, and display device
  • Display substrate, manufacturing method thereof, and display device

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Embodiment Construction

[0041] In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0042] figure 1 It is a schematic diagram of the wiring area of ​​the existing display substrate, such as figure 1 As shown, the wiring area is provided with a gate line 1 and a data line 2, wherein the intersection of the gate line 1 and the data line 2 is covered with an organic film 3, because there is a step difference at the intersection of the gate line 1 and the data line 2 , during the coating process of the organic film 3, due to the influence of the level difference, it is very easy to generate charge accumulation at the crossing position of the gate line 1 and the data line 2. Once the accumulation is too much, the charge will be released to cause ESD phenomenon, such as figure 2 As shown, 4 is the position where ESD occur...

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Abstract

The invention provides a display substrate, a manufacturing method thereof, and a display device, belonging to the technical field of display. Wherein, the routing area of ​​the display substrate includes a first area at the crossing position of the gate line and the data line and a second area except the first area, and the display substrate includes a thin film transistor and covers the thin film transistor. The passivation layer is provided with an organic film on the passivation layer, and the organic film includes a hollow part at least corresponding to the first region. Through the technical scheme of the invention, the yield rate of the display substrate can be improved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a display substrate, a manufacturing method thereof, and a display device. Background technique [0002] In the prior art, when manufacturing a display substrate, after forming a passivation layer covering a thin film transistor, an organic film is formed on the passivation layer, and a pixel electrode is formed on the organic film. The thickness of the organic film is relatively large, reaching the micron level. The organic film can increase the distance between the thin film transistor of the display substrate and the pixel electrode, reduce the parasitic capacitance of the display substrate, thereby reducing the power consumption of the display substrate. [0003] However, in the routing area of ​​the display substrate, the organic film at the crossing position of the gate line and the data line is easy to accumulate charges. Once the accumulation is too much, the ch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/32
CPCH10K59/00H10K59/121H10K59/12H10K59/131
Inventor 彭俊林罗道源杨增乾冯耀耀孙剑秋刘增利
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD