Failure point positioning method based on high temperature light emission microscopic analysis technology

Abstract

The invention provides a failure point positioning method based on the high temperature light emission microscopic analysis technology, and belongs to the technical field of failure analysis. The method comprises the following steps: providing a heating device with a carrying platform, a temperature monitoring device, a voltage excitation source and a detecting component, placing a test sample onthe carrying platform, and connecting the voltage excitation source to the test sample; heating the test sample to a predetermined temperature by the heating device, providing a real-time temperatureof the test sample for a tester by the temperature monitoring device, when the real-time temperature reaches the predetermined temperature, applying voltage excitation of a predetermined value to thetest sample through the voltage excitation source, and performing a detection operation based on the light emission microscopic analysis technology through the detecting component to obtain the positioning information of a failure point. The failure point positioning method provided by the invention has the beneficial effects of positioning the current leakage failure point of the test sample in ahigh temperature state to find the failure cause and to improve the economic benefit.

Description

Technical field [0001] The invention relates to the technical field of failure analysis, in particular to a failure point positioning method based on high-temperature light emission microanalysis technology. Background technique [0002] The experimental method of Emission Microscope (EMMI) at room temperature is as follows: figure 1 As shown, the test sample 1 on the load-bearing platform 2 emits photons from the leakage failure position under the voltage excitation condition. The arrow direction indicates the photon emission direction. The charge coupled device (CCD) camera detects and collects the emitted photons, and then passes Photoelectric conversion, image processing and image superposition are used to locate the failure point, and the whole process is carried out at room temperature. [0003] Existing problems: When the leakage of the test chip is different between normal temperature and high temperature, the above experimental method only locates the leakage position of t...

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Problems solved by technology

[0003] Existing problems: When the leakage of the test chip is different under normal temperature and high temperature, the above experimental method only locates the leakage position of the chip under the normal temperature environment, and cannot accurately locate the leakage position of the chip under the high temperature environment. positioning

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