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A method for controlling the magnetic domain structure of antiferromagnetic layer and pinned layer to realize multi-state data storage in magnetic tunnel junction

A technology of magnetic tunnel junction and antiferromagnetic layer, which is applied in the field of data storage of information technology, can solve the problems of not considering the effective use of antiferromagnetic material performance, and achieve the effect of high thermal stability and high storage density

Active Publication Date: 2021-08-20
SHANDONG UNIV
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Problems solved by technology

[0004] The current research focuses on the fundamental physical effects of antiferromagnetic materials such as spin pumping, spin-orbit coupling, anomalous Hall effect and spin Seebeck effect (Baltz, V. et al. Rev. Mod. Phys. 90,015005(2018)), the existing magnetic storage technology does not consider the effective use of the properties of antiferromagnetic materials, and research on the application of storage devices is urgently needed

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  • A method for controlling the magnetic domain structure of antiferromagnetic layer and pinned layer to realize multi-state data storage in magnetic tunnel junction
  • A method for controlling the magnetic domain structure of antiferromagnetic layer and pinned layer to realize multi-state data storage in magnetic tunnel junction

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Embodiment

[0035] A method for controlling the magnetic domain structure of an antiferromagnetic layer and a pinning layer to realize multi-state data storage in a magnetic tunnel junction, comprising the following steps:

[0036] (1) On a (001) Si substrate with a 300nm thick SiO2 oxide layer, a self-made magnetron sputtering apparatus is used to grow Ta with a thickness of 10nm, Cu with a thickness of 5nm, and Cu with a thickness of 10nm from bottom to top at room temperature. Ta, NiFe with a thickness of 5nm, IrMn with a thickness of 8nm, CoFeB with a thickness of 4nm, MgO with a thickness of 1.6nm, CoFeB with a thickness of 3nm, Ta with a thickness of 10nm, and Au with a thickness of 10nm, the background vacuum of the preparation instrument Better than 5×10- 5 Pascal. The background vacuum of the preparation instrument is better than 5×10- 5 Pascal. CoFeB with a thickness of 4nm is the pinning layer, which has a strong magnetic coupling with the IrMn layer and is difficult to chan...

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Abstract

The invention relates to a method for controlling the magnetic domain structure of an antiferromagnetic layer and a pinning layer to realize multi-state data storage in a magnetic tunnel junction, including: (1) under relatively high temperature conditions, zero magnetic field or applying a magnetic field to the magnetic tunnel junction Saturation magnetic field in the same direction as the induced field; (2) anneal for 1 h; (3) continue annealing at a slightly lower temperature, and apply a magnetic field opposite to the induced field to the magnetic tunnel; (4) gradually increase the annealing magnetic field to The antiferromagnetic layer and the pinned layer coupled with the antiferromagnetic layer are written into different magnetic states; (5) different magnetic states are read out. The invention has the advantages of high thermal stability, insensitivity to external magnetic fields, and high storage density, and is expected to have broad application prospects in low-power consumption magnetic and electronic storage devices.

Description

technical field [0001] The invention relates to a method for controlling the magnetic domain structure of an antiferromagnetic layer and a pinned layer to realize multi-state data storage in a magnetic tunnel junction, and belongs to the field of data storage of information technology. Background technique [0002] With the rapid development of modern information storage and communication technology, it is hoped that future electronic devices will have excellent performances such as high density, low power consumption, non-volatility, and high thermal stability, and even realize the trinity of information storage, processing, and communication. In order to meet the above needs, researchers hope to develop new spintronic devices, such as spin field effect transistors, magnetic random access memory, spin memristors, etc. Its core is based on new materials, new physical effects and new device design concepts, making full use of electron spin properties to overcome the low perfo...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16H01L43/08H01L43/12
CPCG11C11/161G11C11/165H10N50/10H10N50/01
Inventor 颜世申田玉峰陈延学钟海柏利慧康仕寿
Owner SHANDONG UNIV