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A prepartion method of a carbon-coated ultrathin FeMoSe4 nanometer potato chip-like potassium ion negative electrode material

A negative electrode material, potassium ion technology, applied in the direction of negative electrode, battery electrode, active material electrode, etc., to achieve the effect of short production cycle, enlarged layer spacing, and excellent rate performance

Active Publication Date: 2019-01-18
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

According to literature research, there is no colloidal oil phase method to prepare nitrogen-doped carbon-coated ultra-thin FeMoSe 4 A report on the anode material of nano-potato flake composite potassium ion battery

Method used

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  • A prepartion method of a carbon-coated ultrathin FeMoSe4 nanometer potato chip-like potassium ion negative electrode material
  • A prepartion method of a carbon-coated ultrathin FeMoSe4 nanometer potato chip-like potassium ion negative electrode material
  • A prepartion method of a carbon-coated ultrathin FeMoSe4 nanometer potato chip-like potassium ion negative electrode material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034]Add 0.1mmol ferric chloride hexahydrate and 0.1mmol molybdic acid into a single-necked flask filled with 10mL oleylamine and 2mL oleic acid, place it in a heating mantle, heat to 90°C at a heating rate of 5°C / min, and keep it warm for 30min. Then cool the orange solution to room temperature, add 0.2mmol selenium powder to the single-necked flask, heat it to 180°C for 20 minutes and keep it warm for 30 minutes, the obtained black solution is naturally cooled to room temperature and collected by centrifugation, washed at least 5 times with cyclohexane and dried in a vacuum oven at 80 °C for 12 h. Then the dried powder was transferred to a crucible, and the crucible was placed in a tube furnace and heated to 600 °C at a heating rate of 5 °C / min in N2 atmosphere, and kept for 2 hours. After the tube furnace cooled, the black product was collected to obtain Nitrogen-doped carbon-coated ultrathin FeMoSe 4 The nano potato flake potassium ion negative electrode composite materi...

Embodiment 2

[0036] Add 0.1mmol ferric chloride hexahydrate and 0.1mmol molybdic acid into a single-necked flask filled with 10mL oleylamine and 2mL oleic acid, place it in a heating mantle, heat to 90°C at a heating rate of 5°C / min, and keep it warm for 30min. Then cool the orange solution to room temperature, add 0.2 mmol of selenium powder to the single-necked flask, heat it to 180°C for 20 minutes and keep it warm for 60 minutes, the obtained black solution naturally cools down to room temperature and is collected by centrifugation, washed at least 5 times with cyclohexane and dried in a vacuum oven at 80 °C for 12 h. Then the dried powder was transferred to a crucible, and the crucible was placed in a tube furnace and heated to 600 °C at a heating rate of 5 °C / min in N2 atmosphere, and kept for 2 hours. After the tube furnace cooled, the black product was collected to obtain Nitrogen-doped carbon-coated ultrathin FeMoSe 4 Nano potato flake potassium ion negative electrode composite m...

Embodiment 3

[0038] Add 0.1mmol ferric chloride hexahydrate and 0.1mmol molybdic acid into a single-necked flask filled with 10mL oleylamine and 2mL oleic acid, place it in a heating mantle, heat to 90°C at a heating rate of 5°C / min, and keep it warm for 30min. Then the orange solution was cooled to room temperature, 0.2 mmol of selenium powder was added to the single-necked flask, heated to 180°C for 20 minutes and kept for 2 hours, the obtained black solution was naturally cooled to room temperature and collected by centrifugation, washed at least 5 times with cyclohexane and dried in a vacuum oven at 80 °C for 12 h. Then the dried powder was transferred to a crucible, and the crucible was placed in a tube furnace and heated to 600 °C at a heating rate of 5 °C / min in N2 atmosphere, and kept for 2 hours. After the tube furnace cooled, the black product was collected to obtain Nitrogen-doped carbon-coated ultrathin FeMoSe 4 The nano potato flake potassium ion negative electrode composite ...

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Abstract

The invention relates to a preparation method of carbon-coated ultrathin FeMoSe4 nanometer potato chip-like potassium ion negative electrode material, and belongs to the functional nanometer materialand electrochemical field. The method comprises the following steps: adding ferric chloride hexahydrate and molybdic acid into a single-necked flask filled with oleamine and oleic acid and placing theflask in a heating sleeve for pre-dissolution; after cooling to room temperature, adding selenium powder into the flask and heating the flask to the target temperature for a period of time; cooling that final solution to room temperature, cleaning, centrifuge and vacuum drying to obtain black powder; Finally, the obtained powder is transferred to a crucible and heated in an inert protective atmosphere in a tubular furnace to obtain carbon-coated ultrathin FeMoSe4 nano-potato chip-like potassium ion battery negative electrode material. The potassium ion battery negative electrode material synthesized by the invention has simple process, short production cycle, low cost, strong repeatability, has an important reference to the preparation of selenium-based nanocomposites, and has high intrinsic conductivity and large interlayer spacing, excellent rate performance and cycle performance, but also in the semiconductor, energy storage and catalytic fields have broad application prospects.

Description

technical field [0001] The invention belongs to the field of functional nanomaterials, in particular to a nitrogen-doped carbon-coated ultra-thin FeMoSe 4 The invention discloses a preparation method of a nano-potato chip-shaped potassium ion negative electrode composite material. Background technique [0002] In the field of nanomaterials science, nanoselenides are a class of semiconductor materials with excellent properties. The bandgap of selenium-based semiconductor materials is generally between 0.3eV-3.0eV. It is an important direct bandgap semiconductor material with excellent semiconductor properties. At present, the research objects of selenium-based nanomaterials are mainly II-VI selenide nanomaterials (such as CdSe, ZnSe and PbSe), and also include Ag 2 Se, HgSe, Bi 2 Se 3 and other compounds. Due to its many unique optical and electrical properties, it has broad application prospects in functional materials such as optics, electromagnetics, optoelectronics, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/58H01M4/62H01M10/054
CPCH01M4/366H01M4/581H01M4/625H01M4/628H01M10/054H01M2004/021H01M2004/027Y02E60/10
Inventor 包燕平储建华王伟王敏邢立东
Owner UNIV OF SCI & TECH BEIJING
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