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A kind of graphene and continuous production method thereof

A production method and graphene technology, applied in graphene, chemical instruments and methods, nano-carbon, etc., can solve the problems that affect the large-scale development and application of graphene, increase the internal defects of graphene, and easily destroy the crystal structure. Achieve the effects of improving reduction efficiency, effective and reasonable waste heat, and less structural defects

Active Publication Date: 2021-03-19
SICHUAN JUCHUANG SHIMOXI TECH CO LTD +1
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Problems solved by technology

On the one hand, the crystal structure of graphene prepared by redox method is easily destroyed in the process of oxidative intercalation, which leads to the increase of internal defects in graphene, which greatly affects the performance of graphene; On the one hand, there are still a lot of metal and non-metal impurities in graphene produced by redox method, which further affects the large-scale development and application of graphene.

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  • A kind of graphene and continuous production method thereof
  • A kind of graphene and continuous production method thereof
  • A kind of graphene and continuous production method thereof

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Embodiment Construction

[0031] Hereinafter, a graphene and its continuous production method according to the present invention will be described in detail with reference to the accompanying drawings and exemplary embodiments.

[0032] Specifically, in the existing preparation process for preparing graphene oxide, such as using Hummers to prepare graphene oxide, the products prepared therein contain more metal and / or non-metallic impurities, resulting in the impurity of the prepared graphene. Moreover, in the existing graphene preparation process, especially the graphene prepared by the oxidation-reduction method, a large amount of metal and / or non-metallic impurities will be contained in the graphene, and in the oxidation intercalation process, the graphene The crystal structure itself is easily destroyed, which will increase the internal defects of graphene and greatly affect the performance of graphene. The production method of the present invention utilizes the difference between the melting and b...

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Abstract

The invention provides graphene and a continuous production method thereof. The production method includes the step: enabling graphene oxide containing a functional group, metal impurities and / or non-metal impurities to sequentially pass an i reaction area and an n reaction area to obtain the graphene. The temperature and the pressure intensity of the n reaction area are controlled tobe Tn and Pn, the temperature and the pressure intensity of the i reaction area are controlled to be Ti and Pi, wherein Ti=w1*i / n*Tn, Pi=(P0-Pn)*(1-i / n), the w1 is selected from 0.80 to 1.20, P0 serves as one standard atmospheric pressure, n is a natural number and larger than or equal to 2, and i is all natural numbers smaller than n. According to the production method, metal and non-metal impurities in the graphene can be effectively removed at different temperatures and pressure intensities, a lot of oxygen-containing functional groups brought by the graphene oxide are removed, waste heat can be effectively utilized, reduction efficiency is improved, and continuous production of the graphene can be achieved.

Description

technical field [0001] The invention relates to the technical field of new material preparation, more specifically, to a graphene and its continuous production method. Background technique [0002] In 2004, physicists Andre Heim and Konstantin Novoselov of the University of Manchester first separated single-layer graphene from graphite by mechanical exfoliation, and studied its quasi- Particle properties, and field effect properties. This discovery quickly triggered a graphene research boom all over the world. In just a few years, the research and application of graphene have developed vigorously. [0003] Graphene is a two-dimensional honeycomb network structure composed of carbon atoms. It is a surface material composed of a single layer of carbon atoms that can be directly peeled off from graphite. The arrangement of carbon atoms in graphene is the same as that of graphite, which belongs to the compound hexagonal crystal structure. 2 The hybridized orbitals are stacked...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
CPCC01B2204/30C01B32/184Y02P20/129
Inventor 李星刘长虹蔡雨婷漆长席蒋虎南
Owner SICHUAN JUCHUANG SHIMOXI TECH CO LTD