A production system for preparing graphene using low-layer graphene oxide

Abstract

The invention provides a production system for preparing graphene by using few-layer graphene oxide. The production system comprises a graphene oxide purifying device, a few-layer graphene oxide preparing device and a reduction device, wherein the graphene oxide purifying device comprises a first feeding hole, a tank body, a first partition, a second partition, an ultrasonic generation unit and afirst discharging hole, wherein the few-layer graphene oxide preparing device is used for performing freeze drying treatment on purified graphene obtained by the graphene oxide purifying device, and comprises a hydrogel forming unit, a low-temperature drying unit and a conveying mechanism; the reduction device is used for reducing graphene oxide with a second layer number obtained by the few-layergraphene oxide preparing device, and comprises a material cabin, an advancing mechanism, a reaction unit and an atmosphere control unit. The production system has the advantages of simple structure and high production efficiency. The graphene oxide passes through the reaction unit under the action of deadweight, so that the continuous production of the graphene can be realized.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, and more specifically, relates to a production system for preparing graphene by using graphene oxide with a low layer number. Background technique [0002] At present, the mainstream graphene preparation methods include mechanical exfoliation method, redox method, epitaxial growth method, chemical vapor deposition method, etc. Among them, the redox method is due to its low cost, simple production equipment, largest single output, concentrated product layers, The advantages of uniform horizontal size have become the most common method for industrial production. On the one hand, the crystal structure of graphene prepared by redox method is easily destroyed in the process of oxidative intercalation, which leads to the increase of internal defects in graphene, which greatly affects the performance of graphene; On the one hand, there are still a lot of metal and non-metal impurities in g...

AI Technical Summary

Problems solved by technology

On the one hand, the crystal structure of graphene prepared by redox method is easily destroyed in the process of oxidative intercalation, which leads to the increase of internal defects in graphene, which greatly affects the performance of graphene; On the one hand, there are still a lot of metal and non-metal impurities in graphene produced by redox method, which further affects the large-scale development and application of graphene.

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