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Method for preparing graphene from graphene oxide and graphene

A technology of graphene and graphene, which is applied in the field of new material preparation, can solve the problems of affecting the performance of graphene, the crystal structure is easily destroyed, and the increase of internal defects of graphene, etc., to achieve less structural defects, excellent comprehensive performance, and low impurity content Effect

Inactive Publication Date: 2019-05-17
SICHUAN JUCHUANG SHIMOXI TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the graphene prepared by this method is easy to destroy its own crystal structure during the process of oxidative intercalation, resulting in the increase of internal defects in graphene, which greatly affects the performance of graphene; on the other hand, There are still a lot of metal and non-metal impurities in graphene produced by redox method, which further affects the large-scale development and application of graphene

Method used

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  • Method for preparing graphene from graphene oxide and graphene
  • Method for preparing graphene from graphene oxide and graphene
  • Method for preparing graphene from graphene oxide and graphene

Examples

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Effect test

example 1

[0056] A method for preparing graphene includes the following steps:

[0057] S1: Spread graphene oxide containing impurities such as iron, manganese, potassium, sodium, silicon, etc., in a graphite bowl, and put the carrier into a high-temperature vacuum furnace.

[0058] S2: Vacuum the high-temperature vacuum furnace to a negative pressure of 93 Pa.

[0059] S3: Set the temperature of the high-temperature vacuum furnace to 2200°C, and heat for 60 minutes.

[0060] After the above three steps are completed, graphene is prepared, and the carrier is taken out after the temperature is lowered to room temperature. The measured Fe element impurity content of graphene is 45.5 ppm. According to BET absorption and desorption curve, the specific surface area is 206.3m 2 / g. Compared with the existing graphene, the graphene prepared by the present invention has higher purity. The SEM electron microscope picture of the prepared graphene is as follows image 3 As shown, the BET adsorption and ...

example 2

[0062] A method for preparing graphene includes the following steps:

[0063] S1: Put graphene oxide containing iron, manganese, potassium, sodium, silicon and other impurities in a graphite pot carrier, and put the carrier in a purification furnace.

[0064] S2: Vacuum the purification furnace to a negative pressure of 93 Pa.

[0065] S3: Set the temperature of the high-temperature vacuum furnace to 2200°C, and heat for 180 minutes.

[0066] After the above three steps are completed, graphene is prepared, and the carrier is taken out after the temperature is lowered to room temperature. The Fe element impurity content of the graphene is measured to be 34.3 ppm. According to BET absorption and desorption curve, the specific surface area is 194.8m 2 / g. Compared with the existing graphene, the graphene prepared now has a higher purity. The SEM electron microscope picture of the prepared graphene is as follows Figure 5 As shown, the BET adsorption and desorption curve is as Image 6 ...

example 3

[0068] A method for preparing graphene includes the following steps:

[0069] S1: Lay graphene oxide containing impurities such as iron, manganese, potassium, sodium, silicon, etc., on a graphite pot carrier, and put the carrier in a high-temperature vacuum furnace.

[0070] S2: Evacuate the high-temperature vacuum furnace to a negative pressure of 93 Pa.

[0071] S3: Set the temperature of the high-temperature vacuum furnace to 2200°C and heat for 300 minutes.

[0072] After the above three steps are completed, graphene is prepared, and the carrier is taken out after cooling to room temperature. The Fe element impurity content of graphene is measured to be 11.6 ppm. According to BET absorption and desorption curve, the specific surface area is 134.4m 2 / g, compared with the existing graphene, the graphene prepared now has a higher purity. The SEM electron microscope picture of the prepared graphene is as follows Figure 7 As shown, the BET adsorption and desorption curve is as Figu...

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Abstract

The invention provides a method for preparing graphene from graphene oxide and graphene. The method comprises the following steps: placing graphene oxide containing oxygen functional groups and metalimpurities and / or nonmetal impurities in an environment under the pressure of 30Pa-500Pa and at the temperature of 1250 DEG C or higher for full reaction to obtain graphene. The carbon-oxygen ratio ofthe graphene is 18.0 or higher. Graphene is prepared at a certain temperature and air pressure for a certain time, the characteristic of high melting boiling point of graphene is fully utilized, metal and nonmetal impurities in graphene oxide are removed at high temperature, a large number of oxygen-containing functional groups are also removed, SP3 hybridization defects caused in the graphene preparation process are repaired, and the graphene has low impurity content, few structural defects and excellent comprehensive performance.

Description

Technical field [0001] The invention relates to the technical field of preparation of new materials, and more specifically, to a method for preparing graphene from graphene oxide and graphene. Background technique [0002] In 2004, physicists Andre Heim and Konstantin Novoselov of the University of Manchester in the United Kingdom first separated single-layer graphene from graphite by mechanical exfoliation and studied its standard Particle nature, and field effect characteristics. This discovery quickly triggered an upsurge in graphene research around the world. In just a few years, the research and application of graphene has been booming. [0003] Graphene is a two-dimensional honeycomb network structure composed of carbon atoms. It is a surface material composed of a single layer of carbon atoms that can be directly peeled from graphite. The arrangement of carbon atoms in graphene is the same as that of graphite, which belongs to the compound hexagonal crystal structure. They...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184
CPCC01B2204/22C01B2204/30C01B2204/32C01P2002/80C01P2004/03
Inventor 李星刘长虹蔡雨婷漆长席蒋虎南
Owner SICHUAN JUCHUANG SHIMOXI TECH CO LTD