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Three-dimensional semiconductor device

A semiconductor, three-dimensional technology, applied in the field of three-dimensional semiconductor devices, can solve problems such as complex process control, and achieve the effect of improving the reliability of electrical connections

Active Publication Date: 2019-02-05
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To overcome such integration limitations, although a three-dimensional semiconductor device (vertical type semiconductor device) in which memory cells are arranged three-dimensionally has been proposed, more complicated and precise process control is required than in the case of a two-dimensional semiconductor device.

Method used

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Examples

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Embodiment Construction

[0024] figure 1 is a plan view illustrating a schematic diagram of a three-dimensional semiconductor device according to an example embodiment, figure 2 is shown based on figure 1 A block diagram of a three-dimensional semiconductor device of the illustrated embodiment.

[0025] refer to together figure 1 and 2 , the three-dimensional semiconductor device may include a cell array region CAR and a peripheral circuit region PERI. The peripheral circuit region PERI may include a row decoder region ROW DCR, a page buffer region PBR, and a column decoder region COL DCR. The contact region CTR may be disposed between the cell array region CAR and the row decoder region ROW DCR.

[0026] A three-dimensional memory cell array 1 including a plurality of memory cells may be arranged in the cell array region CAR. The memory cell array 1 may include a plurality of memory cells, and a plurality of word lines and a plurality of bit lines electrically connected to the memory cells. I...

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Abstract

A three-dimensional semiconductor device includes: a substrate having a cell array region and a contact region; a stacked structure including a plurality of electrodes and a plurality of electrode isolation insulating layers, which are alternately stacked on the substrate in a vertical direction, and having a stepwise structure on the contact region; vertical structures penetrating the stacked structure in the cell array region, each of the vertical structures constituting a cell string; and word line contact plugs, each penetrating an uppermost electrode among the plurality of electrodes in aregion of each of tread portions of the stacked structure having the stepwise structure, being connected to another electrode under the penetrated uppermost electrode, and being electrically insulated from the penetrated uppermost electrode.

Description

technical field [0001] The disclosed embodiments relate to semiconductor devices, and more particularly, to three-dimensional (3D) semiconductor devices including memory cells arranged three-dimensionally. Background technique [0002] With the ever-decreasing size of semiconductor devices, the integration of two-dimensional (2D) semiconductor devices (or planar type semiconductor devices) in which a plurality of memory cells are arranged two-dimensionally is reaching a limit. In order to overcome such integration limitations, although a three-dimensional semiconductor device (vertical type semiconductor device) in which memory cells are three-dimensionally arranged has been proposed, more complicated and precise process control is required than in the case of a two-dimensional semiconductor device. Contents of the invention [0003] The disclosed embodiments provide a three-dimensional semiconductor device that can improve electrical connection reliability of three-dimens...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11556H01L27/11524H01L27/1157H01L27/11582H10B41/20H10B43/50H10B69/00H10B41/27H10B41/35H10B41/41H10B43/20H10B43/27H10B43/35H10B43/40
CPCH10B41/35H10B41/27H10B43/35H10B43/27H01L21/76816H01L21/76805H01L21/76831H10B43/40H10B43/50H10B41/41H10B41/20H10B43/20H01L23/535H01L29/0649
Inventor 朴玄睦
Owner SAMSUNG ELECTRONICS CO LTD
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