System and method for rinsing and drying wafer

Abstract

The invention discloses a system for rinsing and drying a wafer and a method for cleaning and drying the wafer by using the system. The system includes a main body and a bottom supporting device for supporting the wafer. The main body can accommodate the wafers of different sizes. The bottom supporting device drives the wafer to rotate around an axis. The system also includes a rotating swing armand a bottom pipeline structure for providing cleaning liquid and gas and mixed gas for drying. According to the invention, through the arrangement of one or more wet spraying components on the end ofthe swing arm and a fixing plate on the bottom supporting device, the gas and liquid are sprayed to cover the upper and lower surfaces of the whole wafer, and through the arrangement of one or more gas solvent spraying components on the end of the swing arm, the mixed gas for drying is sprayed to cover the upper surface of the whole wafer. Therefore, the upper and lower surfaces of the wafer canbe effectively dried without leaving liquid traces.

Description

technical field [0001] The invention relates to a processing technology for drying wafers in chemical mechanical planarization equipment, in particular to a system and method for rinsing and drying wet wafers. Background technique [0002] As semiconductor production process technology continues to advance, the importance of ultra-clean processing continues to increase. In chemical mechanical planarization equipment (Chemical Mechanical Planarization, CMP equipment), the requirements for cleaning and drying are also increasing. In the process of drying wet wafers, one of the basic requirements is to dry the wafers and prevent any particles that were originally attached to the solution from reattaching to the wafers. If the wafer is not completely dried using a suitable method, the particles in the solution may affect the electrical characteristics of the semiconductor device, resulting in the device not working properly. Therefore, how to correctly remove the liquid on the...

AI Technical Summary

Problems solved by technology

Although this method can achieve the drying effect, it also has several obvious disadvantages: first, the drying effect of this method has not reached a high level, and the particles attached to the solution are very difficult to obtain during the high-speed centrifugation process. There may be scratches on the surface of the wafer, which will affect the performance of the wafer, and it is impossible to ensure that all attachments are removed, and a part of the particles will often remain on the surface of the wafer.

The disadvantage of this drying method is that the movement speed of the wafer will be relatively slow (in order to achieve the ideal drying effect), so the whole process will take a long time

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