Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of power device packaging structure and its preparation method

A packaging structure and power device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., to achieve the effects of improving thermal conductivity, sealing performance, moisture-proof performance, and excellent heat dissipation performance

Active Publication Date: 2020-04-28
ADVANCED SEMICONDUCT ENG (WEIHAI) INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While the heat dissipation performance of the existing intelligent power modules needs to be further improved, at the same time, it is necessary to ensure that it has excellent sealing performance and moisture-proof performance. focus on

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of power device packaging structure and its preparation method
  • A kind of power device packaging structure and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] The present invention also proposes a method for preparing the above power device packaging structure, comprising the following steps:

[0032] 1) A metal substrate is provided, and a first annular concave hole is formed on the peripheral edge of the lower surface of the metal substrate. The material of the metal substrate is one of aluminum, copper and stainless steel, and is etched by wet etching or dry method. Etching to form the first annular concave hole, the depth of the first annular concave hole is 0.5-1 mm, to improve the bonding tightness between the subsequently formed second thermally conductive sealant layer and the metal substrate, thereby improving the overall power device package The sealing performance and moisture-proof performance of the structure;

[0033] 2) bonding a heat-conducting silica gel layer on the upper surface of the metal base to improve the heat conduction performance and shock resistance of the entire power device packaging structure; ...

Embodiment 1

[0044] The present invention proposes a method for preparing a package structure of a power device, comprising the following steps:

[0045] 1) A metal base is provided, and a first annular concave hole is formed on the peripheral edge of the lower surface of the metal base. The material of the metal substrate is aluminum, and the first annular concave hole is formed by wet etching, and the the depth of the first annular recess is 0.8 mm;

[0046] 2) bonding a heat-conducting silica gel layer on the upper surface of the metal base;

[0047] 3) Depositing an insulating material on the thermally conductive silica gel layer to form an insulating layer, depositing silicon nitride by PECVD to form the insulating layer, and the thickness of the insulating layer is 90 microns;

[0048] 4) forming a circuit wiring layer on the insulating layer, the specific steps are: bonding copper foil on the insulating layer, and removing part of the copper foil through an etching process to form ...

Embodiment 2

[0057] The present invention also proposes a method for preparing the above power device packaging structure, comprising the following steps:

[0058] 1) A metal base is provided, and a first annular concave hole is formed on the peripheral edge of the lower surface of the metal base. The material of the metal substrate is copper, and the first annular concave hole is formed by dry etching, and the the depth of the first annular recess is 1 mm;

[0059] 2) bonding a heat-conducting silica gel layer on the upper surface of the metal base;

[0060] 3) Depositing an insulating material on the thermally conductive silica gel layer to form an insulating layer, depositing silicon carbide by PECVD to form the insulating layer, the thickness of the insulating layer is 120 microns;

[0061] 4) forming a circuit wiring layer on the insulating layer, the specific steps are: bonding copper foil on the insulating layer, and removing part of the copper foil through an etching process to fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a novel power device package structure and a preparation method thereof. The method comprises the steps that a thermal conductive silica layer, an insulating layer and a circuit wiring layer are formed on a metal substrate, and are embedded into a heat insulating plastic frame; the circuit wiring layer is divided into a first region and a second region; a driving element and a corresponding first pin are arranged in the first region of the circuit wiring layer, and a power element and a corresponding second pin are assembled in the second region of the circuit wiring layer; a first heat insulating sealant layer is formed in the heat insulating plastic frame, and then a first thermal conductive sealant layer, a second heat insulating sealant layer and a heat dissipation block are sequentially formed; and finally a second thermal conductive sealant layer is formed. The novel power device package structure provided by the invention has the advantages of excellentsealing performance, good heat dissipation performance, good stability and long service life.

Description

technical field [0001] The invention relates to the technical field of power device packaging, in particular to a power device packaging structure and a preparation method thereof. Background technique [0002] Intelligent power module is a power drive semiconductor power device package that combines power electronics and integrated circuit technology. In the existing intelligent power modules, in order to improve the heat dissipation performance of the intelligent power module, the commonly used methods are: one method is to set a heat insulation structure in the metal packaging substrate to prevent the heat from spreading laterally, and the other method is to A high thermal conductivity block is placed in a low thermal conductivity package substrate. While the heat dissipation performance of the existing intelligent power modules needs to be further improved, at the same time, it is necessary to ensure that it has excellent sealing performance and moisture-proof performan...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/56H01L23/29H01L23/31H01L23/367H01L23/373
CPCH01L21/56H01L23/293H01L23/3135H01L23/367H01L23/3737H01L2224/48091H01L2924/00014
Inventor 管先炳
Owner ADVANCED SEMICONDUCT ENG (WEIHAI) INC