Auxiliary graph optimization method
A technology of auxiliary graphics and optimization methods, which is applied to the photographic process of patterned surfaces, originals for photomechanical processing, optics, etc., and can solve problems such as slow computing speed, large demand for computing servers, and difficulty in applying auxiliary graphics. , to save time and improve the effect of effective promotion
Pending Publication Date: 2019-03-08
上海微阱电子科技有限公司
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Problems solved by technology
Among them, adding auxiliary graphics based on rules has fast calculation speed, but it is difficult to ensure that the design graphics can obtain the largest lithography process window
Adding auxiliary graphics based on models or reverse lithography calculations can usually obtain a larger lithography process window, but the calculation speed is slow and the computing server requires a lot, so it is difficult to apply to the actual operation of adding auxiliary graphics
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[0032] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0033] It should be noted that, in the following specific embodiments, when describing the embodiments of the present invention in detail, in order to clearly show the structure of the present invention for the convenience of description, the structures in the drawings are not drawn according to the general scale, and are drawn Partial magnification, deformation and simplification are included, therefore, it should be avoided to be interpreted as a limitation of the present invention.
[0034] In the following specific embodiments of the present invention, please refer to figure 1 , figure 1 It is a flowchart of an optimization method for auxiliary graphics in the present invention. Such as figure 1 Shown, a kind of auxiliary graph optimization method of the present invention comprises the following steps:
[0035] Step S01: Est...
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The invention discloses an auxiliary graph optimization method comprising the following steps of S01, building an OPC model; S02, selecting a test graph used for optimizing an auxiliary graph; S03, adding the auxiliary graph based on a rule, the model and a reverse photoetching computation method; S04, selecting an auxiliary graph scheme according to process window data of the test graph; S05, simplifying the auxiliary graph scheme; and S06, acquiring an optimized auxiliary graph adding rule. By using the method provided by the invention, the auxiliary graph scheme is optimized, and via the optimized test graph, the better auxiliary graph adding scheme is acquired by fitting operation and applied to an OPC solution, so that the time is saved, and the effective enhancement of the auxiliarygraph to the main graph process window is also improved.
Description
technical field [0001] The present invention relates to the technical field of semiconductor integrated circuit manufacturing technology, and more specifically, to a method for optimizing auxiliary graphics. Background technique [0002] With the continuous development of integrated circuits and the continuous development of manufacturing technology towards smaller dimensions, the photolithography process has become the main bottleneck restricting the development of integrated circuits to smaller feature sizes. [0003] In deep sub-micron semiconductor manufacturing, the size of the key pattern is much smaller than the wavelength of the light source. Due to the diffraction effect of light, the pattern projected on the silicon wafer by the mask will change greatly, such as the change of line width and the corner Various optical proximity effects such as the rounding of the wire and the shortening of the line length. [0004] In order to compensate for the influence of these ...
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CPCG03F1/36
Inventor 卢意飞
Owner 上海微阱电子科技有限公司