U-shaped power electronic series valve structure

Abstract

The invention provides a U-shaped power electronic series valve structure comprising a top pressurization valve bracket composed of a top layer press plate, a bottom layer press plate and a bolt and acompression nut penetrating through the top layer press plate and a bottom layer press plate, and valve series and a direct current capacitor arranged between the top layer press plate and the bottomlayer press plate; the series of valves are two columns of IGBT valve series separately perpendicular to the bottom layer press plate and opposite to each other; top end press plats are separately arranged between the top ends of the two columns of IGBT valve series and the top layer press plate; the top ends of the two columns of IGBT valve series are separately connected with positive and negative pole terminals of the direct current capacitor. According to the technical scheme provided by the invention, serial connection is achieved by the two columns of IGBT valve series opposite to eachother on the bottom layer press plate, meanwhile the positive and negative poles are separately arranged on the top ends of the two columns of valve series, so that the distance between the positive and negative poles is effectively reduced, the distance is no longer affected by the length of the valve series, and thus the stray inductance after the valve series is powered on is reduced.

Description

technical field [0001] The invention relates to a series valve structure, in particular to a U-shaped power electronic series valve structure. Background technique [0002] As an important component in the field of power electronics, IGBT is widely used and most of its applications are in the form of crimped valve strings. In power electronic equipment, connecting wires, component leads, component bodies, etc. will present a certain equivalent inductance, which is called stray inductance, and IGBT valve strings are no exception. The stray inductance generated by the IGBT valve string during energization has a great relationship with the position between its positive and negative bus bars. [0003] At present, in the high-voltage IGBT series valve, the linear crimping method is usually used. In the structure, the distance between the positive and negative DC busbars depends on the number of IGBTs in series and the thickness of the water-cooled radiator. In the case of a larg...

AI Technical Summary

Problems solved by technology

[0003] At present, in the high-voltage IGBT series valve, the linear crimping method is usually used. In the structure, the distance between the positive and negative DC busbars depends on the number of IGBTs in series and the thickness of the water-cooled radiator. In the case of a large number of IGBTs in series, the positive The distance between the negative busbars is often relatively large, which results in large stray inductance of the loop and high peak voltage, and the material of the pressure plate and positioning pin cannot meet the requirements of the use environment

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