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Preparation method of novel liquid side surface high-resistance layer for increasing 2ms square wave through flow of zinc oxide piezoresistor

A technology of varistor and square wave flow, which is applied in the direction of coating resistance materials, etc., to achieve the effect of stable process and reducing the fluctuation of glaze layer thickness

Inactive Publication Date: 2019-03-19
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] The technical problem to be solved in the present invention: in the formulation of the megavolt resistor, through the adjustment of the formula of the high-resistance layer and the control of the process, the shrinkage ratio of the body of the resistor and the glaze layer can be matched, which not only solves the side insulation problem of the resistor , while improving the square wave current capacity of the resistor

Method used

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  • Preparation method of novel liquid side surface high-resistance layer for increasing 2ms square wave through flow of zinc oxide piezoresistor
  • Preparation method of novel liquid side surface high-resistance layer for increasing 2ms square wave through flow of zinc oxide piezoresistor

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Embodiment 1

[0040] Select the D5 specification resistor sheet, and follow the figure 1 The method shown is equipped with four types of high resistance layers A, B, C, and D

[0041] The following is a detailed description of the specific formula-level production process.

[0042] After the zinc oxide valve plate is prepared by raw materials, mixed by ball milling, spray-dried and pressed into shape:

[0043] 1) Sintering

[0044] Use a high-temperature electric furnace to sinter the green body in a closed atmosphere. The specific temperature and control time are as follows:

[0045] From room temperature to 400°C, the heating time is 10~15 hours;

[0046] Keep low temperature debinding at 280°C for 5 hours;

[0047]Cool down to room temperature (15° per hour)

[0048] 2) Coating high-resistance layer (coating 2g for each resistor sheet, coating thickness of high-resistance layer is 0.1mm);

[0049] 3) From room temperature to 900°C, the heating time is 9 (100°C per hour) hours;

[...

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Abstract

The invention relates to a preparation method of a novel liquid side surface high-resistance layer for increasing the 2ms square wave through flow of a zinc oxide piezoresistor. The method comprises the steps of mixing the prepared raw materials, heating for dissolving to prepare a uniform solution, and directly coating the side surface of a foamed resistance piece with the solution. The method ischaracterized by comprising a raw material preparation step, a ball-mill mixing step, a spray drying step, a compression formation step, a sintering step, a coating step and a piece formation step, wherein the raw material preparation step, the ball-mill mixing step, the spray drying step, the compression formation step, the sintering step and the coating step are sequentially carried out. The preparation method has the beneficial effects that by selecting a formed upper high-resistance layer, the fluctuation, caused due to non-uniform pre-sintering shrinking rate of the thickness in the past, of a glaze layer is reduced, and the process is relatively stable.

Description

technical field [0001] The invention relates to the field of resistor sheet preparation technology, in particular to a new method for a high-resistance layer in the manufacturing process of a nonlinear resistor sheet. Background technique [0002] The ZnO resistor is the core component of the ZnO arrester, so it is a key component that determines the performance of the arrester. In the national standard, the surge arresters whose nominal discharge currents are 5kA and 10kA respectively are required to reach 65kA and 100kA for their ability to withstand two 4 / 10μs high-current shocks. Foreign patent research chooses SiO 2 Fe 2 o 3 System formula, but the ability of D3 and D4 resistors to withstand high current impact can only reach about 60kA and 80kA respectively, which is still a certain distance from the requirements of 65kA and 100kA respectively. Improving the high-current capability of ZnO resistors is a common problem among domestic counterparts. The technical diff...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622C04B41/87H01C17/06
CPCC04B35/453C04B35/62222C04B41/009C04B41/505C04B41/87C04B2235/3279C04B2235/3293C04B2235/3294C04B2235/3298C04B2235/3409C04B2235/6562C04B2235/6565C04B2235/6567H01C17/06C04B41/5027C04B41/5049C04B41/4539C04B41/0072
Inventor 何金良孟鹏飞胡军谢清云蒙小记胡小定李刚
Owner TSINGHUA UNIV
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