Optical proximity correction method for optimizing connection performance of through hole layers

Abstract

The invention discloses an optical proximity correction method for optimizing the connection performance of through holes. The method comprises the steps that S1 a through hole initial pattern and oneor two connected metal layer patterns are provided; S2 selective size adjustment is carried out on the metal layer pattern to acquire a metal layer adjusted pattern; S3 a target through hole patternwith the through hole initial pattern coverage less than a predetermined threshold is acquired; S4 the size of the target through hole pattern is adjusted to acquire a through hole layer adjusted pattern, so that the coverage of the metal layer adjusted pattern on the through hole layer adjusted pattern is greater than or equal to the predetermined threshold; S5 the through hole initial pattern and the through hole layer adjusted pattern are combined to acquire a through hole layer combined pattern; and S6 optical proximity correction is carried out on the through hole layer combined pattern,and the corrected through hole layer combined pattern is output. The method provided by the technical scheme of the invention can effectively make up for insufficient coverage caused by metal layer size adjustment and ensure the process width of a narrow process window pattern of a metal layer.

Description

technical field [0001] The invention relates to the technical field of integrated circuit photolithography technology, in particular to an optical proximity correction method for optimizing the connection performance of a via layer. Background technique [0002] In the back-end process manufacturing of integrated circuits, the effective connection between the metal layer and the via layer is an important factor to ensure product yield and performance. In an ideal design situation, the via pattern is completely contained within the metal pattern. However, in the actual process, the pattern of the metal layer on the silicon wafer will be affected by the optical proximity effect, resulting in deformation or distortion, and the connection of some via holes may be affected; in addition, with the continuous reduction of the line width, It is difficult to achieve a certain process window for all graphics under a certain process condition. In view of the above problems, by applyin...

AI Technical Summary

Problems solved by technology

The traditional approach increases the coverage of the metal layer, but at the same time reduces the isolated pattern spacing accordingly, compressing the process width of the narrow process window pattern of the metal layer

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