Probe system for low-temperature plasma potential diagnosis

A low-temperature plasma and plasma technology, which is applied in the measurement of electric variables, electrostatic field measurement, and current/voltage measurement, can solve the problems of impact, low efficiency of diagnosis time, and lack of real-time performance.

Inactive Publication Date: 2019-03-22
BEIJING INSTITUTE OF TECHNOLOGYGY +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But its shortcomings are also very obvious: first, when there are a large number of diagnostic needs, if the power supply does not have a voltage scanning function, the diagnostic time efficiency is low; Real-time; Third, measurement noise has a great influence on the results of plasma parameter derivation

Method used

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  • Probe system for low-temperature plasma potential diagnosis
  • Probe system for low-temperature plasma potential diagnosis
  • Probe system for low-temperature plasma potential diagnosis

Examples

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Embodiment 1

[0031] This embodiment discloses a probe system for low-temperature plasma potential diagnosis, including: metal wires, insulating sleeves, metal columns, wires, sampling resistors, oscilloscopes, and DC stabilized power supplies, such as figure 1 shown;

[0032] Connection relationship: two channels are opened on the insulating sleeve, and the channels are used to fix and install the metal posts; then the two metal posts are connected through a metal wire; the other end of the metal post is connected to a DC stabilized voltage power supply and two sampling resistors through a wire ; The two sampling resistors are connected in parallel with the DC power supply after being connected in series; the measurement probe of the oscilloscope is installed at the center of the two series sampling resistors;

[0033] The wire material is tungsten, with a diameter of 0.127mm and a length of 4mm, in a U-shaped structure; figure 2 shown;

[0034] The insulating sleeve material is ceramic...

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Abstract

The invention belongs to the field of low-temperature plasma parameter diagnosis equipment, relates to a probe system and particularly relates to a probe system for low-temperature plasma potential diagnosis. The probe system comprises a metal wire, an insulating sleeve, two metal posts, wires, two sampling resistors, an oscilloscope and a direct-current stabilized power source. The insulating sleeve is provided with two passages for fixed mounting of the metal columns; the two metal columns are conducted through the metal wire; the other end of each metal column is connected to the direct-current stabilized power source and the two sampling resistors through the wires; the two sampling resistors are serially connected and then parallelly connected with the direct-current stabilized powersource; a measurement probe of the oscilloscope is mounted at the center of the two sampling resistors in series connection. By symmetry of a parallel circuit and plasma sheath in a contact process oflow-temperature plasmas with metal equipment, real-time, quick and accurate measurement of low-temperature plasma potential is realized.

Description

technical field [0001] The invention relates to a probe system, in particular to a probe system for low-temperature plasma potential diagnosis, and belongs to the field of low-temperature plasma parameter diagnosis equipment. Background technique [0002] In low temperature plasma (plasma number density less than 10 22 m -3 ) application field, mainly using the low-temperature plasma generated by the plasma generator. The parameters of the low-temperature plasma largely determine the performance of the application level. Therefore, it is necessary to diagnose the parameters of the low-temperature plasma. Generally, the low-temperature plasma parameters that need to be diagnosed include plasma potential, plasma density and plasma energy. [0003] At present, the plasma potential diagnosis method mainly adopts the current collection scheme, and its basic principle is: when a certain potential difference is formed between the metal device and the low-temperature plasma diagno...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/12G01R19/00
CPCG01R19/0061G01R29/12
Inventor 郭宁夏启蒙谢侃谷增杰张尊秦宇
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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