Method for forming conductive structure

Abstract

The invention relates to the technical field of semiconductors, and especially relates to a method for forming a conductive structure. The method comprises the steps: S1, providing a wafer including asubstrate, wherein a groove is formed on the substrate; S2, pretreating the groove by using reducing gas; S3, using the gas processing process to remove the reducing gas in the groove; S4, employinga deposition process to deposit a polysilicon layer in the groove for filling the groove, so as to form a conductive structure. The conductive structure having a gap defect can be avoided, and the conductive structure is ensured to have excellent electrical properties.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a method for forming a conductive structure. Background technique [0002] In semiconductor devices, such as flash memory devices, it is generally necessary to form a conductive structure for electrically connecting the upper and lower structures in the wafer. Such a conductive structure is generally formed in a trench, and the method of formation may be to fill the trench with a conductive material through a furnace tube. [0003] However, in the manufacturing process of the existing conductive structure, since impurities or defects are easily formed in the trench, the process of growing the conductive material tends to be too concentrated at these impurities or defects, thereby affecting the uniformity of the growth of the conductive material. In severe cases, it is easy to cause the conductive material to be sealed in the trench in advance, thereby forming incompletel...

AI Technical Summary

Problems solved by technology

[0003] However, during the preparation process of the existing conductive structure, impurities or defects are easily formed in the trenches, and the process of growing conductive materials is likely to be too concentrated at these impurities or defects, thereby affecting the uniformity of the growth of conductive materials.

In severe cases, it is easy to cause the conductive material to be sealed in advance in the trench, thereby forming incompletely filled void defects in the trench, which will seriously affect the electrical performance of the device

Images