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A Field Effect Transistor Terahertz Detector Based on Parallel Pair Structure

A field-effect transistor and terahertz detector technology, which is applied in the field of terahertz wave detectors, can solve the problem of low terahertz frequency response, achieve the effects of increasing detection frequency, increasing detection responsivity, and improving power transmission efficiency

Active Publication Date: 2021-02-26
TIANJIN UNIV
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Problems solved by technology

[0004] The purpose of the present invention is to provide a field-effect transistor terahertz detector based on a parallel-connected tube structure for the technical defects existing in the prior art, which can effectively solve the problem that the detector has a low response to a terahertz frequency, and realize terahertz detection. The Effect of Hertzian Detectors on Terahertz High Frequency Response

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  • A Field Effect Transistor Terahertz Detector Based on Parallel Pair Structure

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Embodiment Construction

[0016] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0017] The present invention adopts two sets of parallel transistors to receive the terahertz signal transmitted from the terahertz signal source to the differential antenna and then to the corresponding T-shaped matching network.

[0018] see figure 1 As shown, a field effect transistor terahertz detector based on a parallel pair of tube structure includes: a differential antenna for receiving terahertz wave signals, used to detect the terahertz wave signals received by the differential antenna and rectify them into weaker A transistor that is read out after the DC signal is superimposed by the drain output; the transistor includes four transistors, and every two transistors are con...

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Abstract

The invention discloses a field effect transistor terahertz detector based on a parallel pair tube structure, which includes: a differential antenna for receiving a terahertz wave signal, used for detecting the terahertz wave signal received by the differential antenna and rectifying it into a weaker terahertz wave signal Transistors read out after DC signals are multiplied and superimposed; the transistors include four transistors, and every two transistors are connected in parallel; between the two feeds of the differential antenna and the sources of every two parallel transistors A T-shaped impedance matching network is respectively set to match the input impedance of the antenna feed with the source input impedance of the transistor, so as to realize the maximum power transfer between the differential antenna and the transistor. The invention can have a higher response to the terahertz wave signal to increase the detection responsivity.

Description

technical field [0001] The invention relates to the technical field of terahertz wave detectors, in particular to a field-effect transistor terahertz detector based on a parallel paired tube structure. Background technique [0002] Terahertz technology is considered to be "one of the top ten technologies that will change the world in the future". At present, the international research level on electromagnetic wave technology on both sides of the terahertz radiation band, that is, infrared technology and microwave technology, has been very mature. Due to the lack of effective terahertz radiation generation and detection means, and this wave band is neither completely suitable for optical theory, nor is it completely suitable for microwave electronics theory, so the current scientific community has limited understanding of this wave band. As a result, terahertz has become the last frequency window that has not been fully studied in the electromagnetic spectrum, so that it is ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/44H01Q1/22H01Q1/38H01Q1/50H01Q21/00
CPCG01J1/44G01J2001/4473H01Q1/22H01Q1/38H01Q1/50H01Q21/0006
Inventor 马建国商德春傅海鹏刘亚轩张新
Owner TIANJIN UNIV