Surface-emitting laser chip heat dissipation structure and method for manufacturing same

Abstract

The invention provides a method for manufacturing a surface-emitting laser chip heat dissipation structure. The method comprises the following steps of: 1) thinning a surface-emitting laser wafer; 2)using a photolithography technique to define a pattern at one side, back to a light emitting surface, of the surface-emitting laser wafer, and using dry etching or wet etching to dig holes; 3) fillingthe holes with high thermal conductive heat-dissipating materials; 4) planarizing the side, back to the light emitting surface, of the surface-emitting laser chip; and 5) cutting the surface-emittinglaser wafer to form a plurality of surface-emitting laser chips. The invention also provides a surface-emitting laser chip heat dissipation structure, one side, back to the light emitting surface, ofthe chip is provided with an opening hole extended close to the light-emitting surface direction, and the holes are filled with the materials with high heat conductivity coefficients to reduce the whole thermal resistance of the chip.

Description

Technical field [0001] The present invention relates to the field of lasers, in particular to surface-emitting lasers. Background technique [0002] Due to breakthroughs in applications such as high-power surface-emitting lasers, 3D sensing and special industrial heating, the current requirements for the heat dissipation structure of high-power surface-emitting lasers are getting higher and higher. At present, in order to do effective heat dissipation management, currently commonly used There are [0003] 1. Reduction of the overall thickness of the chip: the final thickness of the chip is reduced to 100um or even 75um, which directly reduces the thermal resistance of the chip, but it is easy to break the chip in the later processing and reduce the yield; [0004] 2. Adjustment of the epitaxial structure; using epitaxial materials with high thermal conductivity, this method can only reduce the local thermal resistance and because the epitaxial layer is very thin, the benefit of impr...

AI Technical Summary

Problems solved by technology

[0003] 1. Reduction of the overall thickness of the chip: the final thickness of the chip is reduced to 100um or even 75um, which directly reduces the thermal resistance of the chip, but it is easy to break during post-processing and the yield rate drops;

[0004] 2. Adjustment of the epitaxial structure; using epitaxial materials with high thermal conductivity, this method can only reduce local thermal resistance and because the epitaxial layer is very thin, the benefit of improvement is not great;

[0005] 3. Use packaging substrates with high thermal conductivity: from diamond film coating substrates to metal / ceramic substrates, the purpose is to increase heat dissipation, but the disadvantage is high cost

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