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Feeding pipe for reduction furnace, reduction furnace and adjusting method for hole diameter of feeding pipe

A feed pipe, reduction furnace technology, applied in sustainable manufacturing/processing, climate sustainability, chemical industry, etc. question

Active Publication Date: 2019-04-09
青海亚洲硅业半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a feed pipe for the reduction furnace, a method for adjusting the aperture of the reduction furnace and the feed pipe, so as to solve the uneven flow field in the reduction furnace existing in the prior art, which cannot meet the existing production needs technical issues
[0007] In order to solve the problem of uneven flow field in the reduction furnace of the prior art, the process of producing polysilicon in the prior art is now studied

Method used

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  • Feeding pipe for reduction furnace, reduction furnace and adjusting method for hole diameter of feeding pipe
  • Feeding pipe for reduction furnace, reduction furnace and adjusting method for hole diameter of feeding pipe
  • Feeding pipe for reduction furnace, reduction furnace and adjusting method for hole diameter of feeding pipe

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Embodiment Construction

[0049] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0050] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, ...

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Abstract

The invention provides a feeding pipe for a reduction furnace, the reduction furnace and an adjusting method for the hole diameter of the feeding pipe and belongs to the technical field of productionof polycrystalline silicon. The feeding pipe comprises a feeding pipe body, wherein a spraying nozzle is arranged at an outlet of the feeding pipe body; an inner cavity of the spraying nozzle is provided with a spraying hole penetrating through the first end of the spraying nozzle to the second end, and the spraying nozzle is partitioned into a first part and a second part along the plane of the central axis of the spraying hole; the diameter of the spraying hole part on the first part is gradually reduced from the first end of the spraying nozzle to the second end; the diameter of the spraying hole part on the second part is gradually expanded from the first end of the spraying nozzle to the second end. In the technical scheme, by the spraying nozzle formed by the first part and the second part on the feeding pipe, the size of the hole diameter of the spraying hole can be randomly adjusted, further the flowing speed of mixed material and gas of hydrogen and trichlorosilane entering the furnace is adjusted, so that the flow field in the furnace is in a best state all the time, the quality of a polycrystalline silicon product is improved, the energy is saved and the consumption is reduced.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a feed pipe for a reduction furnace, a reduction furnace and a method for adjusting the diameter of the feed pipe. Background technique [0002] At present, from the development process of international solar cells, it can be seen that its development trend is monocrystalline silicon, polycrystalline silicon, ribbon silicon and thin film materials (including microcrystalline silicon-based thin films, compound-based thin films and dye thin films). [0003] Among them, polycrystalline silicon is a form of elemental silicon. When molten elemental silicon is solidified under supercooled conditions, silicon atoms are arranged in the form of diamond lattices to form many crystal nuclei. If these crystal nuclei grow into crystal grains with different crystal plane orientations, these crystal grains combine to crystallize into polycrystalline silicon. . [0004] The main...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/03
CPCC01B33/03Y02P20/10
Inventor 高志明甘易武韩成福闫晓英唐芝礼郑连基李娜
Owner 青海亚洲硅业半导体有限公司
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