Terahertz Schottky diode for improving current crowding effect based on multi-pitch anode

Abstract

The invention discloses a terahertz Schottky diode for improving current crowding effect based on multi-pitch anode, and relates to the technical field of Schottky diodes. The diode comprises a Schottky diode body, wherein the Schottky diode body comprises a plurality of Schottky diode junctions connected in series, the anode and cathode of each Schottky diode junction are connected by an air bridge, the anode main body on the lower side of the air bridge is circular or rectangular, the circular or rectangular anode main body is provided with a plurality of outwardly extending anode sub bodieswhich form a diffusion channel for transmitting current from the anodes to the cathodes. The diode can effectively improve the current crowding effect of the Schottky diode, reduce power dissipation,and increase the frequency doubling efficiency of the frequency doubled diode.

Description

technical field [0001] The invention relates to the technical field of Schottky diodes, in particular to a terahertz Schottky diode that improves the current crowding effect based on multi-split anodes. Background technique [0002] Terahertz waves refer to electromagnetic waves with a frequency in the range of 100GHz-10THz, which overlap with the high-end of millimeter waves, submillimeter waves and far infrared, and are in the transitional field from macroelectronics to microphotonics. Terahertz waves occupy a very special position in the electromagnetic spectrum. Terahertz is a new radiation source with many unique advantages; Terahertz technology is a very important cross-frontier field, which provides a very attractive opportunity for technological innovation, national economic development and national security. [0003] In the low-end range of THz frequency, the solid-state source is usually obtained by frequency doubling of semiconductor devices. This method doubles...

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Problems solved by technology

[0004] When the Schottky diode is used for frequency multiplication, the input power is generally large, about 100mW-500mW, and sometimes even greater input power is input. In the case of high power input, the THz Schottky diode The current is relatively large. Since the anode of the current terahertz frequency-multiplying Schottky diode is circular or rectangular, and the area is about tens of square microns, the current passes through such a Schottky diode under the standard circular or rectangular pattern. When the junction is connected, there is a strong congestion effect, which causes the resistance to rise, dissipates the input power, and reduces the frequency doubling efficiency of the frequency doubling diode

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