Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultrasonic atomization and classification device for submicron powder and its application

A sub-micron, atomizing device technology, applied in the direction of swirl device and other directions, can solve the problems of low classification efficiency, complex process, long time consumption, etc., and achieve the effect of improving classification efficiency, energy density, and atomization results.

Active Publication Date: 2020-02-07
ANHUI JINGCHENG NEW MATERIAL CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem to be solved by the present invention is to solve the problems of complex process, low classification efficiency, long time consumption and discontinuity in the submicron classification of powder in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultrasonic atomization and classification device for submicron powder and its application
  • Ultrasonic atomization and classification device for submicron powder and its application
  • Ultrasonic atomization and classification device for submicron powder and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0085] Raw materials to be separated: the particle size range of the original silicon powder is 0-600nm, and the median particle size is 300nm.

[0086] The height ratio of the upper, middle and lower parts of the ultrasonic atomization device 1 is 6:19:4, the height of the middle part is 0.5m, the diameter is 0.5m, the angle of the upper cone is 35°, and the angle of the lower part is cone, the angle is 20°, and the small hole of the isolation plate 140 is 1, and its diameter is 2cm.

[0087] The above silicon powder to be classified is made into a suspension with a concentration of 0.1%, and the flow rate is 40L / h. The silicon powder suspension is fed from the solution inlet 6, and the inlet water pressure of the solution inlet 6 is 0.5MPa, and the suspension passes through at a high speed. The small hole 510 in the middle of the orifice plate 520 forms a jet and undergoes hydraulic changes. The jet impacts the reed 540. The length and thickness of the reed are 40 and 0.3mm ...

Embodiment 2

[0090] Raw materials to be separated: the particle size range of the original silicon powder is 0-600nm, and the median particle size is 300nm.

[0091] The height ratio of the upper, middle and lower parts of the ultrasonic atomization device 1 is 6:19:4, the height of the middle part is 0.5m, the diameter is 0.5m, the angle of the upper cone is 35°, and the angle of the lower part is cone, the angle is 20°, and the small hole of the isolation plate 140 is 1, and its diameter is 2cm.

[0092] The above-mentioned silicon powder to be classified is made into a suspension with a concentration of 0.1%, and the flow rate is 40L / min. The silicon powder suspension is sent from the solution inlet 6. The inlet water pressure of the solution inlet 6 is 0.3MPa, and the suspension passes through at a high speed. The small hole 510 in the middle of the orifice plate 520 forms a jet and undergoes hydraulic changes. The jet impacts the reed 540. The length and thickness of the reed are 40 a...

Embodiment 3

[0095] Raw materials to be separated: the particle size range of the original silicon powder is 0-600nm, and the median particle size is 300nm.

[0096] The height ratio of the upper, middle and lower parts of the ultrasonic atomization device 1 is 6:19:4, the height of the middle part is 0.5m, the diameter is 0.5m, the angle of the upper cone is 35°, and the angle of the lower part is cone, the angle is 20°, and the small hole of the isolation plate 140 is 1, and its diameter is 2cm.

[0097] The above silicon powder to be classified is made into a suspension with a concentration of 0.3%, and the flow rate is 40L / h. The silicon powder suspension is fed from the solution inlet 6, and the inlet water pressure of the solution inlet 6 is 0.5MPa, and the suspension passes through at a high speed. The small hole 510 in the middle of the orifice plate 520 forms a jet and undergoes hydraulic changes. The jet impacts the reed 540. The length and thickness of the reed are 40 and 0.3mm ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a submicron powder ultrasonic atomization grading device and an application thereof, and belongs to the field of powder grading. The ultrasonic atomization grading device comprises an ultrasonic atomization device, a solution inlet, a solution outlet, a nitrogen inlet and a nitrogen outlet; a liquid whistle dispersing device is arranged behind the solution inlet, the liquidwhistle dispersing device comprises a pipeline for installing a pore plate and a pipeline for installing a reed, and the two parts of pipelines are connected through flanges; and a silicon powder collecting device is arranged in front of the nitrogen outlet, a liquid level sensor and transducers are installed on the inner wall of a container of the ultrasonic atomization device, the number of thetransducers is 4-6, and the transducers are all installed at the same height. According to the ultrasonic atomization grading device, submicron silicon powder is graded by adopting an ultrasonic atomization grading mode, so that the problems that a conventional grading mode in the prior art is long in grading time, low in precision and complex in process are solved, and raw materials are subjected to dispersion treatment, so that the grading efficiency of the ultrasonic atomization grading is improved.

Description

technical field [0001] The invention belongs to the field of powder classification, and in particular relates to an ultrasonic atomization classification device for submicron powder and its application. Background technique [0002] At present, the particle size of silicon powder produced after ball milling has two scales: micron (particle size diameter is 1.0-5.0 μm) and sub-micron (particle size diameter is 100nm-1.0 μm). In order to further improve the performance of the product, sub-micron Silica fume is separated from silica fume in a process called submicron grading of silica fume. Currently known methods for classifying silicon powder include centrifugal classification, microporous filtration, wet electrostatic classification, cyclone classification, etc. However, these classification methods have the following disadvantages: [0003] 1. The density gradient is not obvious when classifying submicron particles. The particle size after centrifugal classification can r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B04C9/00
CPCB04C9/00
Inventor 俞建峰楼琦赵江吴撼程洋
Owner ANHUI JINGCHENG NEW MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com