Method for preparing AgBiS2 semiconductor film

A semiconductor and thin film technology, which is applied in the field of AgBiS2 semiconductor thin film preparation, can solve the problems that it is difficult to deposit a film with sufficient thickness, not completely absorb photon energy, and limit the application of photovoltaic conversion, so as to improve photovoltaic performance and accurately control the composition , The effect of low equipment requirements

Pending Publication Date: 2019-04-26
CENT SOUTH UNIV
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  • Abstract
  • Description
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Problems solved by technology

ikB 2 At present, it can be mainly prepared by hot injection method and hot solvent method, but the preparations are all nanoparticle materials.
AgBiS 2 The highest efficiency of solar cells made of materials has reached 6.3%, but the AgBiS prepared by thermal injection method 2 Nanocrystalline solar cells use organic matter as the hole transport layer, which is difficult to withstand post-annealing treatment, resulting in small film particles and too many grain boundaries, which will cause the loss of short-circuit current to a certain

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  • Method for preparing AgBiS2 semiconductor film
  • Method for preparing AgBiS2 semiconductor film
  • Method for preparing AgBiS2 semiconductor film

Examples

Experimental program
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Effect test

Embodiment 1

[0038] Dissolve silver nitrate in 10 ml of pure water to obtain a 0.25 mol / L silver nitrate solution (stir at room temperature for 30 minutes to obtain a colorless and clear solution). At the same time, bismuth nitrate pentahydrate was added to 10 ml of acetic acid solution to obtain a 0.25 mol / L bismuth source solution (stir at 50° C. for 30 minutes to obtain a colorless and clear solution).

[0039] Then silver nitrate solution and bismuth source solution were mixed, heated to 60°C, 1.903g of thiourea was added rapidly, and fully stirred for 30min to obtain a yellow clear solution without precipitation. After the above solution was cooled, 0.5ml of diethanolamine and 0.5ml of triethanolamine were added dropwise, and stirred at room temperature for five minutes to obtain a precursor solution. The viscosity of the precursor solution was significantly higher than that without additives.

[0040] Then the prepared AgBiS 2 The precursor solution was spin-coated on Mo glass, pre-...

Embodiment 2

[0044] Dissolve silver fluoride in 30ml pure water to obtain a 0.5mol / L silver source solution. At the same time, bismuth chloride was added to 30 ml of dilute nitric acid solution to obtain a 0.25 mol / L bismuth source solution (stirred at 50° C. for 30 minutes to obtain a colorless and clear solution).

[0045] Then mix the silver source solution and the bismuth source solution, heat to 50°C, quickly add 4.5672g thiourea, and fully stir for 30min to obtain a yellow clear solution without precipitation.

[0046] After the above solution was cooled, 2ml of ethanolamine was added dropwise, and stirred at room temperature for five minutes to obtain a precursor solution, which was set aside. Then the prepared AgBiS 2 The precursor solution was squeegee-coated on the FTO conductive glass substrate and white glass (for UV testing), pre-fired at 270°C between each two squeegee coatings, and spin-coated 10 times to complete the AgBiS 2 Spin-coating of prefabricated layers, tested, A...

Embodiment 3

[0050] Dissolve silver nitrate in 50 ml of pure water to obtain a 2 mol / L silver nitrate solution (stir at room temperature for 60 minutes to obtain a colorless and clear solution). At the same time, bismuth nitrate pentahydrate was added to 70 ml of acetic acid solution to obtain a 2 mol / L bismuth source solution (stirred at 80° C. for 60 minutes to obtain a colorless and clear solution).

[0051] Then silver nitrate solution and bismuth source solution were mixed, heated to 40°C, 28g of thiourea was added rapidly, and fully stirred for 30min to obtain a yellow clear solution without precipitation. After the above solution was cooled, 2ml of ethanol and 2ml of triethanolamine were added dropwise, and stirred for five minutes at room temperature to obtain a precursor solution. The viscosity of the precursor solution was significantly higher than that without additives.

[0052] Then the prepared AgBiS 2 The precursor solution was drop-coated on two Mo conductive glass substra...

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Abstract

The invention discloses a method for preparing an AgBiS2 semiconductor film. The method includes first preparing a solution containing silver and a solution containing bismuth separately, then mixingthe two solutions, adding thiourea, heating and stirring, then adding an additive for mixing to obtain a stable precursor solution with suitable viscosity, conducting film coating and pre-burning to obtain a preformed layer, and finally conducting an annealing process to enhance the film crystallinity and obtain the AgBiS2 semiconductor film. The method has the advantages of simple operation, mildreaction conditions, low requirements on equipment, low cost and easy industrial production. The prepared AgBiS2 semiconductor film has good film formation quality, large particles and pure phase, and is beneficial to improve the photovoltaic performance of a film material. The film has high light absorption coefficient, suitable forbidden band width, good electrical property and high carrier mobility, and is very suitable to serve as an absorption layer material for a thin film solar battery.

Description

technical field [0001] The invention relates to the technical field of manufacturing solar cell photovoltaic absorbing layer materials, in particular to an AgBiS 2 Method for the preparation of semiconductor thin films. Background technique [0002] Compound thin-film solar cells are considered as a new type of solar cells to replace silicon solar cells, including thin-film solar cells such as CdTe and CIGSe. elements, which limit the sustainable and large-scale development of these two thin-film batteries. Researchers have been working hard to find a material that can replace CdTe and CIGSe, and a quaternary compound thin film solar cell such as CZTS has appeared, but due to the loss of open circuit voltage caused by the anti-site defect of this material, its photoelectric conversion efficiency has been improved slowly. . At present, the highest photoelectric conversion efficiency of pure Si-based CZTS thin-film solar cells is 11%, which is far from the commercial requir...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032C01G29/00
CPCH01L31/032H01L31/18C01G29/006Y02P70/50
Inventor 肖涵睿肖劲刘芳洋蒋良兴贾明
Owner CENT SOUTH UNIV
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