Conditioning method for polishing pad, and chemical-mechanical polishing method and device

A chemical machinery and grinding device technology, used in grinding devices, grinding machine tools, abrasive surface adjustment devices, etc., can solve the problems of inaccurate leveling parameters, inability to reach the surface of the grinding pad, affecting the good rate of the CMP process, etc. performance effect

Inactive Publication Date: 2019-05-03
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, by measuring the groove data on the surface of the polishing pad or adjusting the leveling parameters of the dresser according to the groove data according to empirical rules, the leveling parameters obtained in this way are not accurate, and the surface of the polishing pad still cannot achieve the required flat surface , thus affecting the excellent rate of the CMP process

Method used

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  • Conditioning method for polishing pad, and chemical-mechanical polishing method and device
  • Conditioning method for polishing pad, and chemical-mechanical polishing method and device
  • Conditioning method for polishing pad, and chemical-mechanical polishing method and device

Examples

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Comparison scheme
Effect test

Embodiment 1

[0054] figure 1 It is a flow chart of the polishing pad dressing method according to Embodiment 1 of the present invention. Such as figure 1 As shown, Embodiment 1 may include the following steps:

[0055] S101. Receive surface roughness data of the polishing pad sent by the roughness detection device within a preset time; wherein, the surface roughness data is obtained by the roughness detection device by measuring the surface of the polishing pad.

[0056] Such as figure 2 As shown, the chemical mechanical polishing apparatus generally includes a polishing table 10 , a polishing pad 20 , a dresser 40 , a distribution tube 50 and a controller 70 . Wherein, in the CMP process, the polishing pad 20 is arranged on the polishing table, the wafer 30 is arranged on the described polishing pad 20 with the direction facing the described polishing pad, the polishing table 10 rotates in one direction, and the polishing table 10 is set There is a rotating mechanism 101, and the end...

Embodiment 2

[0065] in such as figure 1 On the basis of the first embodiment shown, the embodiment of the present invention also provides image 3 The second embodiment shown.

[0066] S301. Receive surface roughness data of the polishing pad sent by the roughness detection device within a preset time; wherein, the surface roughness data is obtained by the roughness detection device by measuring the surface of the polishing pad.

[0067] The specific structure of the chemical mechanical polishing device is as described in Embodiment 1, and will not be repeated here. The preset time in this embodiment usually refers to a preset time interval, that is to say, the surface roughness data of the polishing pad is acquired every certain time interval. This ensures that the surface roughness of the polishing pad is kept in an optimal state throughout the grinding process.

[0068] S302. Perform calculation according to the surface roughness data to obtain leveling parameters for dressing the po...

Embodiment 3

[0079] Such as Figure 5 Shown is a flow chart of the chemical mechanical polishing method in Embodiment 3 of the present invention. The chemical mechanical polishing method that the present invention implements three comprises the steps:

[0080] S501, grind the object to be ground on the grinding pad, and execute step S505.

[0081] Specifically, the objects to be ground include substrates such as semiconductor objects to be ground. During the grinding process, the object to be ground is placed on the grinding pad, and the grinding pad is located on the grinding table. The polishing liquid pumped in by the liquid pump is continuously supplied to the polishing pad, so the chemical mechanical polishing process is to use the chemical additives in the polishing liquid to produce a chemical reaction on the surface of the object to be ground in contact with the polishing pad to form a An easy-to-grind layer, combined with mechanical grinding assisted by abrasive grains in the p...

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Abstract

The invention provides a conditioning method for a polishing pad, and a chemical-mechanical polishing method and device. The conditioning method for the polishing pad comprises the steps of receivingsurface roughness data of the polishing pad sent by a roughness detecting device within a preset time, wherein the surface roughness data is obtained by using the roughness detecting device to measurethe surface of the polishing pad; performing calculation conversion according to the surface roughness data to obtain leveling parameters for conditioning of the polishing pad, wherein the leveling parameters include conditioning pressure, conditioning time and rotation speed; and sending a control command based on the leveling parameters to a conditioner to enable the conditioner to condition the polishing pad in a real-time dynamic adjustment way according to the control command. The conditioning method adopting the technical scheme has the following advantages that the roughness data of the surface of the polishing pad can be obtained in real time, and the surface of the polishing pad is conditioned in real time according to the roughness data so that the surface roughness of the polishing pad can meet the polishing requirement, and thus the polishing performance can be improved.

Description

technical field [0001] The invention relates to an integrated circuit manufacturing method, in particular to a grinding pad dressing method, a chemical mechanical grinding method and a device for improving the grinding effect of a fixed particle grinding pad. Background technique [0002] During the chemical-mechanical polishing (CMP) process, at least one semiconductor wafer is placed on the polishing pad facing the direction of the polishing pad on the grinder, and then the semiconductor wafer is pressed against the grinding handle , and rotate the grinding handle and the grinding pad in the same direction respectively. During the grinding and rotating process, the grinding liquid is supplied to the surface of the grinding pad synchronously, so as to make use of the chemical reaction provided by the grinding liquid and the mechanical grinding effect produced by the semiconductor wafer under the pressure of the grinding handle to make the surface of the semiconductor wafer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B53/017B24B1/00B24B37/10B24B37/005B24B37/20
Inventor 蔡长益
Owner CHANGXIN MEMORY TECH INC
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