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Semiconductor memory device and memory system including semiconductor memory device

A memory system and memory controller technology, applied in static memory, read-only memory, digital memory information, etc., can solve the problems of semiconductor memory manufacturing cost increase, semiconductor memory size increase, etc.

Active Publication Date: 2021-06-15
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the number of pads increases, the size of the semiconductor memory may increase, and thus the manufacturing cost of the semiconductor memory may increase

Method used

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  • Semiconductor memory device and memory system including semiconductor memory device
  • Semiconductor memory device and memory system including semiconductor memory device
  • Semiconductor memory device and memory system including semiconductor memory device

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Experimental program
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Embodiment Construction

[0047] Embodiments of the inventive concepts can be described in detail and clearly described in detail, so that embodiments of the inventive concepts can be implemented in the art.

[0048] figure 1 It is a block diagram showing the memory system 10 of an embodiment in accordance with the concept of the present invention. reference figure 1Memory system 10 can include controller 20 and semiconductor memory device 100 (also referred to herein as semiconductor memory 100). For example, the semiconductor memory 100 can include a dynamic random access memory (DRAM), a synchronous DRAM (SDRAM), a double data rate SDRAM (DDR SDRAM), and a low power DDR SDRAM (LPDDR SDRAM).

[0049] The controller 20 can communicate with the semiconductor memory 100 through the first controller pad 21 to the sixth controller pad 26. The semiconductor memory 100 can communicate with the controller 20 through the first memory pads 101 to the sixth memory pad 106. As described herein, the second controlle...

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PUM

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Abstract

A semiconductor memory device includes a memory core that performs reading and writing of data; a data transfer and training block connected between a first pad and the memory core; and at least one of data transfer, clock generation, and training A block connected between the at least one second pad and the memory core. In the first training operation, the data transfer and training block outputs the first training data received through the first pad as second training data through the first pad. In a second training operation, at least one of said data transfer and training blocks outputs third training data received through said at least one second pad through at least one of said first pads as fourth training data . The second training data and the fourth training data are output in synchronization with the read data strobe signal output through at least one second pad.

Description

[0001] Cross-reference [0002] The present application claims priority to Korean Patent Application No. 10-2017-0140363, filed on October 26, 2017, which is incorporated herein by reference. Technical field [0003] Embodiments of the inventive concepts described herein relate to a semiconductor memory device (also referred to herein as a semiconductor memory), and more particularly to a semiconductor memory, a memory system including a semiconductor memory, and a semiconductor memory method. Background technique [0004] Semiconductor memory devices are used in various electronic devices. The semiconductor memory device can be used to store data for the electronic device. In addition, the semiconductor memory can be used to load the electronic device executable code, such as an operating system, firmware, software, and the like. [0005] As the quality used in the electronic device is improved, the demand for the performance of the semiconductor memory is increasing. For example...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/32
CPCG11C16/32G11C5/025G11C7/106G11C7/1087G11C7/1093G11C11/4076G11C29/028G11C2207/105G11C2207/107G11C2207/2254G11C7/1066G11C11/4093G11C7/222G11C7/1006G11C7/22G11C11/4091
Inventor 金荣勋金始弘
Owner SAMSUNG ELECTRONICS CO LTD