GaN-based LED vertical structure chip and preparation method thereof

Abstract

The invention discloses a GaN-based LED vertical structure chip and a preparation method thereof. The chip comprises an undoped layer, an N-GaN layer, a quantum well layer and P-GaN layer, which are sequentially stacked; a groove which passes through the P-GaN layer and the quantum well layer and exposes the N-GaN layer; a transparent conductive layer which is formed on the P-GaN layer, wherein the distance between the edge of a side wall, close to the groove, of the transparent conductive layer and the side wall of the groove is within a preset range; a reflecting layer which is formed on thetransparent conductive layer; a first insulating layer which is formed on the reflecting layer and covers a side wall of the groove and the P-GaN layer; a barrier layer which is formed on the reflecting layer; second insulating layers formed on the barrier layer and the first insulating layer; a bonding substrate and a bonding layer which is located on the bonding substrate, wherein the bonding layer faces the second insulating layers, and the bonding layer is disposed in the groove and is in electrical connection with the N-GaN layer; a P electrode formed at one side of the P-GaN layer, thequantum well layer, the N-GaN layer and the undoped layer and connected with the P-GaN layer through the barrier layer. According to the invention, the light extraction efficiency of the chip is improved.

Description

technical field [0001] The invention relates to the field of LED chip manufacturing, in particular to a GaN-based LED vertical structure chip and a preparation method thereof. Background technique [0002] The structure of the current GaN-based LED is divided into a front structure, a flip structure and a vertical structure. There are two obvious disadvantages in front-mounted LEDs. First, the p and n electrodes of the front-mounted LED are on the same side of the LED, and the current must flow through the n-GaN layer laterally, resulting in current congestion and high local heat generation, which limits the drive current; Secondly, due to the poor thermal conductivity of the sapphire substrate (growth substrate), heat dissipation is seriously hindered. In order to solve the heat dissipation problem, the American Lumileds Lighting Company invented the flip chip (Flipchip) technology, which has greatly improved the heat dissipation effect, but the usual GaN-based flip-chip s...

AI Technical Summary

Problems solved by technology

There are two obvious disadvantages of front-mounted LEDs. First, the p and n electrodes of the front-mounted LED are on the same side of the LED, and the current must flow through the n-GaN layer laterally, resulting in current congestion and high local heat generation, which limits the driving current; Secondly, due to the poor thermal conductivity of the sapphire substrate (growth substrate), it seriously hinders the dissipation of heat

In order to solve the heat dissipation problem, the American Lumileds Lighting Company invented the flip chip (Flipchip) technology, which has greatly improved the heat dissipation effect, but the usual GaN-based flip-chip structure LED is still a horizontal structure, and the phenomenon of current crowding still exists. limits the further increase of the drive current

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