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Semiconductor nanowire laser device with rapid wavelength tuning

A semiconductor and nanowire technology, applied in the laser field, can solve problems such as low repeatability of operation, low tuning speed, and irreversible tuning, and achieve the effects of fast tuning, precise control, and adjustable time delay

Active Publication Date: 2019-05-03
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the above methods have disadvantages such as low repeatability of operation, low tuning rate, small tuning range, and irreversible tuning. , semiconductor nanowire lasers with wide wavelength tuning range and fast wavelength tuning speed to promote the process of wavelength tunable semiconductor nanowire lasers towards practicality

Method used

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  • Semiconductor nanowire laser device with rapid wavelength tuning
  • Semiconductor nanowire laser device with rapid wavelength tuning
  • Semiconductor nanowire laser device with rapid wavelength tuning

Examples

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Embodiment 1

[0027] In this embodiment, the CdS semiconductor nanowires are suspended in the air, and a 355 nm pulsed laser is used to pump the CdS semiconductor nanowires to achieve laser output. 2 The pulsed laser (laser output wavelength: 10.6 μm) performs rapid temperature control on the CdS semiconductor nanowires to realize the rapid tuning of the output wavelength of the semiconductor nanowire laser. The 355 nm pulsed laser and CO 2 The output repetition frequency of the pulsed laser is equal to 200 Hz, the pulse width of the 355 nm pulsed laser is 3.5 ns, and the pump power density is 10 kW / cm 2 , CO 2 The pulse width of the pulsed laser is 500 μs, and the 355 nm pulsed laser with CO 2 The pulse time delay between pulsed lasers is τ 1 .

[0028] figure 2 Shown is the laser output wavelength versus delay τ for a CdS semiconductor nanowire with a diameter of 400 nm and a length of 10 μm 1 Graphs of results that vary as a function of change. figure 2 It can be seen that the ti...

Embodiment 2

[0030] In this embodiment, the CdS semiconductor nanowires are suspended in the air, and a 355 nm pulsed laser is used to pump the CdS semiconductor nanowires to achieve laser output. 2 A pulsed laser (laser output wavelength: 10.6 μm) performs rapid temperature control on CdS semiconductor nanowires to realize rapid tuning of the output wavelength of the semiconductor nanowire laser. A 355 nm pulsed laser and CO 2 The output repetition frequency of the pulsed laser is equal to 200 Hz, the pulse width of the 355 nm pulsed laser is 3.5 ns, and the pump power density is 10 kW / cm 2 , CO 2 The pulse width of the pulsed laser is 500 μs, and the 355 nm pulsed laser with CO 2 The pulse time delay between pulsed lasers is τ 2 .

[0031] image 3 Shown is the laser output wavelength versus delay τ for a CdS semiconductor nanowire with a diameter of 500 nm and a length of 12 μm 2 Graphs of results that vary as a function of change. It can be seen from the figure that the time dela...

Embodiment 3

[0033] In this example, the CdS semiconductor nanowires are suspended in the air, and the nanowires are pumped by a 355 nm pulsed laser to achieve laser output. 2 A pulsed laser (laser output wavelength: 10.6 μm) performs rapid temperature control on CdS semiconductor nanowires to realize rapid tuning of the output wavelength of the semiconductor nanowire laser. A 355 nm pulsed laser and CO 2 The output repetition frequency of the pulsed laser is equal to 200 Hz, the pulse width of the 355 nm pulsed laser is 3.5 ns, and the pump power density is 10kW / cm 2 , CO 2 The pulse width of the pulsed laser is 500 μs, and the 355 nm pulsed laser with CO 2 The pulse time delay between pulsed lasers is τ 3 .

[0034] Figure 4 Shown is the laser output wavelength versus delay τ for a CdS semiconductor nanowire with a diameter of 500 nm and a length of 13 μm 3 Graphs of results that vary as a function of change. Figure 4 It can be seen in the time delay τ 3 in the range of 1.5-4.5 ...

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Abstract

The invention discloses a semiconductor nanowire laser device with rapid wavelength tuning. The semiconductor nanowire laser device comprises a pump light source, a pump light source focusing lens, animaging camera, a spectrometer, a microscope objective, a semiconductor nanowire and a supporting object of the semiconductor nanowire, wherein the semiconductor nanowire is arranged in a field-of-view range of the microscope objective, and the pump light source focusing lens can focus output light of the pump light source onto the semiconductor nanowire. The semiconductor nanowire laser device further comprises a heating laser source and a heating laser focusing lens, wherein the heating laser focusing lens can focus output light of the heating laser source onto the semiconductor nanowire, and a wavelength of the output light of the heating laser source is greater than a resonant wavelength of the semiconductor nanowire and is within a strong absorption spectrum of the semiconductor nanowire; and laser signals output by the semiconductor nanowire are collected by means of the microscope objective and are guided to the imaging camera and the spectrometer separately, the laser signal guided to the imaging camera is subjected to physical imaging, and the laser signal guided to the spectrometer is subjected to spectral imaging.

Description

technical field [0001] The invention relates to a semiconductor nanowire laser for tuning the output wavelength, which belongs to the field of laser technology. Background technique [0002] As a nanoscale coherent light source, semiconductor nanowire lasers have attracted more and more attention in the fields of basic theory and engineering applications in recent years, and have extensive applications in the fields of optical sensing, signal transmission, optical imaging, on-chip communication, and quantum optics. The application prospect has received continuous attention and research. [0003] Semiconductor nanowires (or nanorods, nanobelts), because of their good single crystal structure, smooth surface roughness, uniform diameter, relatively high refractive index, strong optical field confinement, and low optical transmission loss , making it an ideal optical nanowaveguide. In addition, the semiconductor nanowire has high optical gain, and the flat end surface of the n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/06
Inventor 郭欣许培臻童利民
Owner ZHEJIANG UNIV
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