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A kind of semiconductor device and its manufacturing method, electronic device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as bridging of the second polysilicon layer

Active Publication Date: 2022-06-28
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention proposes a semiconductor device and its manufacturing method, which can overcome the bridging problem of the second polysilicon layer in the current high-voltage devices

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  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device
  • A kind of semiconductor device and its manufacturing method, electronic device

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Embodiment Construction

[0039] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other instances, some technical features known in the art have not been described in order to avoid obscuring the present invention.

[0040] It should be understood that the present invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0041] It will be understood that when an element or layer ...

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Abstract

The invention provides a semiconductor device, a manufacturing method thereof, and an electronic device. The manufacturing method includes: providing a semiconductor substrate on which an oxide layer and a first conductive layer located on the oxide layer are formed; forming a covering The first insulating layer of the first conductive layer and the oxide layer; forming a spacer on the first insulating layer on the sidewall of the first conductive layer to cover all the sidewalls of the first conductive layer an undercut region under the first insulating layer; and a second conductive layer formed on the first insulating layer. The fabrication method can overcome the bridging problem of the second polysilicon layer in the current high-voltage device. The semiconductor device and electronic device have similar advantages.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] In the manufacture of integrated circuits, not only conventional low-voltage MOS devices, but also various high-voltage MOS devices are involved, so as to be applied in high-voltage scenarios. A high-voltage device product developed at present uses cross-shaped double-layer polysilicon to achieve high voltage resistance. Push down (for example, a PMOS device) to form a high-resistance region to achieve high voltage resistance. During the research and development process, it was found that the second polysilicon layer had a bridge phenomenon. Wafer failure analysis showed that in the sidewall region of the first poly layer, there was a second poly layer remaining at the bottom of the oxide layer, resulting in bridging of the second poly layer. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78
Inventor 马莹
Owner SEMICON MFG INT (SHANGHAI) CORP