Display substrate, manufacturing method thereof, and display device
A technology for displaying substrates and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as packaging film cracks, reducing packaging film reliability, and packaging film failure, so as to avoid failure and improve reliability The effect of ensuring the uniformity of film thickness
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 example
[0067] The first embodiment of the present invention exhibits a method of fabricating a substrate, the display substrate including a display area, and an open hole region is provided, and the production method includes:
[0068] S1: Preparation of array structural layers;
[0069] S2: A isolation structure disposed around the open cell region is formed on the surface of the array structure layer, the separator structure having a first side wall having a slope angle of no greater than 90 °;
[0070] S3: Forming a stress concentration region for contact with the first side wall and for eliminating inorganic films formed thereon.
[0071] In the present embodiment, prior to S3, further includes forming a pixel definition layer and a light-emitting structure layer; after S3, a first inorganic film forming the filler structure and the isolation structure is further included.
[0072] The method of displaying the substrate is described in detail with the top gate TFT as an example.
[0...
no. 2 example
[0095] The second embodiment of the present invention exhibits a method of fabricating a substrate, the display substrate including a display area, and an open hole region is provided, and the production method includes:
[0096] S1: Preparation of array structural layers;
[0097] S2: A isolation structure disposed around the open cell region is formed on the surface of the array structure layer, the separator structure having a first side wall having a slope angle of no greater than 90 °;
[0098] S3: Forming a stress concentration region for contact with the first side wall and for eliminating inorganic films formed thereon.
[0099] In this embodiment, before S3, it is also included to form a pixel definite layer, a light-emitting structure layer, and a first inorganic film forming the isolation structure; in S3, an organic formed in a region outside the isolation structure is formed. The protective layer; after S3, it is also included to form a second inorganic film that cove...
no. 3 example
[0116] A third embodiment of the present invention provides a display substrate, such as figure 1 with Figure 12 As shown, the display substrate includes a display area, and an open hole region 100 is provided, and an effective display area 200 located outside the opening region 100, the display substrate comprising:
[0117] Array structure layer;
[0118] The isolation structure provided on the surface of the array structure layer and is disposed around the open hole region, the separator structure having a first side wall having a slope angle of no greater than 90 °;
[0119] Contact with the first side wall and is used to eliminate the filling structure 70 of the stress concentrated region of the inorganic film formed thereon.
[0120] Among them, the slope angle of the side wall for carrying the inorganic film is not less than 90 °.
[0121] Wherein, the array structure layer includes a substrate 10, a thin film transistor 20 disposed on the substrate 10, a flat layer 30 dispos...
PUM
| Property | Measurement | Unit |
|---|---|---|
| angle | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More