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Fabrication method of inverted qled device

A device and precursor solution technology, which is applied in the field of preparation of inverted QLED devices, can solve the problems of poor film-forming and flatness of the electron transport layer, and achieve the effect of solving poor film-forming and flatness and improving film-forming properties

Active Publication Date: 2021-03-23
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The embodiment of the present application provides a method for preparing an inverted QLED device to solve the technical problem of poor film-forming and flatness of the electron transport layer of the existing inverted QLED device

Method used

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  • Fabrication method of inverted qled device
  • Fabrication method of inverted qled device
  • Fabrication method of inverted qled device

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Embodiment Construction

[0035] Please refer to the drawings in the accompanying drawings, wherein like reference numerals refer to like components. The following description is based on illustrated specific embodiments of the present application, which should not be construed as limiting other specific embodiments of the present application that are not described in detail here.

[0036] Please refer to Figure 1 to Figure 3 , figure 1 It is a flowchart of an embodiment of the method for manufacturing an inverted QLED device of the present application; figure 2 A flow chart of preparing an electron transport layer for an embodiment of the method for manufacturing an inverted QLED device of the present application; image 3 It is a schematic structural diagram of a QLED device manufactured by the embodiment of the method for manufacturing an inverted QLED device of the present application. The preparation method of the inverted QLED device of the embodiment of the present application, which includ...

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Abstract

The application provides a method for preparing an inverted QLED device, including a process for preparing an electron transport layer. The process for preparing an electron transport layer includes preparing a precursor solution for the electron transport layer; adjusting the surface tension and viscosity of the precursor solution to adapt to spraying. The needs of ink printing; the adjusted precursor solution is sprayed on the cathode layer by inkjet printing technology, and dried to form a film layer; the film layer is heat-treated to form an electron transport layer. The present application adopts an in-situ reaction method to form an electron transport layer, thereby improving the film-forming property, uniformity and flatness of the electron transport layer.

Description

technical field [0001] The present application relates to a display technology, in particular to a preparation method of an inverted QLED device. Background technique [0002] In QLED (Quantum Dot Light Emitting Diodes, Quantum Dot Light Emitting Diodes) devices, ZnO (zinc oxide) is generally used as the electron transport layer of the device, but the ZnO thin film prepared by the method of ZnO nanoparticle solution has poor film-forming property and is difficult to A flat film is obtained, which further affects the photoelectric performance of the device. Contents of the invention [0003] The embodiment of the present application provides a method for manufacturing an inverted QLED device, so as to solve the technical problem of poor film-forming property and flatness of the electron transport layer of the existing inverted QLED device. [0004] The embodiment of the present application provides a method for manufacturing an inverted QLED device, which includes: [000...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/50H01L51/54
CPCH10K50/00H10K71/00
Inventor 张育楠
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD