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Semiconductor device and formation method thereof, and semiconductor structure

A semiconductor and device technology, which is applied in the field of semiconductor devices and their formation methods and semiconductor structures, can solve the problems that the electrical performance of flash memory needs to be improved, and achieve the effects of optimizing electrical performance, reducing etching loss, and avoiding too small a width

Active Publication Date: 2019-05-21
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the electrical performance of the prior art flash memory still needs to be improved

Method used

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  • Semiconductor device and formation method thereof, and semiconductor structure
  • Semiconductor device and formation method thereof, and semiconductor structure
  • Semiconductor device and formation method thereof, and semiconductor structure

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Embodiment Construction

[0032] It can be seen from the background art that the electrical performance of the flash memory still needs to be improved. Combining with a method of forming a semiconductor device, the reason why its electrical performance still needs to be improved is analyzed.

[0033] combined reference Figure 1 to Figure 4 , shows a schematic structural diagram corresponding to each step in a method for forming a semiconductor device. The method for forming the semiconductor device includes the following steps:

[0034] refer to figure 1 , providing a base (not marked), the base includes a substrate 10 with trenches 11, a polysilicon floating gate (Floating Gate, FG) layer 20 on the substrate 10 between the trenches 11, and a A hard mask layer 30 on the floating gate layer 20 .

[0035] In this embodiment, the hard mask layer 30 is used as an etching mask for etching to form the trench 11 , and the material of the hard mask layer 30 is silicon nitride or silicon oxynitride.

[00...

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PUM

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Abstract

The invention provides a semiconductor device and a formation method thereof, and a semiconductor structure. The formation method of the semiconductor device includes steps: providing a base comprising a substrate with grooves, a floating gate layer located on the substrate between the grooves, and a hard mask layer located on the floating gate layer; forming a protection layer on sidewalls of thefloating gate layer; forming isolation structures in the grooves after forming the protection layer; and removing the hard mask layer after forming the isolation structures. According to the semiconductor device and the formation method thereof, and the semiconductor structure, before forming the isolation structures, the protection layer is formed on the sidewalls of the floating gate layer, andthe protection layer can produce a protection effect on the sidewalls of the floating gate layer to reduce or avoid the etching loss of the sidewalls of the floating gate layer by the process of removing the hard mask layer so that the problem of over-small width or poor width uniformity of the floating gate layer is avoided, and the electrical performance of a formed flash memory can be optimized.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device, its forming method and semiconductor structure. Background technique [0002] At present, flash memory (Flash), also called flash memory, has become the mainstream of non-volatile memory. According to different structures, flash memory can be divided into two types: Nor Flash and NAND Flash. The main feature of flash memory is that it can keep stored information for a long time without power on, and has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control a wide range of applications. [0003] However, the electrical performance of the flash memory in the prior art still needs to be improved. Contents of the invention [0004] The problem solved by the invention is to provide a semiconductor device, its forming method and...

Claims

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Application Information

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IPC IPC(8): H01L27/11521
Inventor 陈亮
Owner SEMICON MFG INT (SHANGHAI) CORP
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